X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism

TitleX-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism
Publication TypeJournal Article
Year of Publication2003
AuthorsDwikusuma, F, Kuech, TF
JournalJournal of Applied Physics
Volume94
Pagination5656-5664
Date PublishedNov
DOI10.1063/1.1618357