STUDY OF THE GAS-PHASE CHEMISTRY IN THE SILICON DOPING OF GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE AS THE GROUP-V SOURCE

TitleSTUDY OF THE GAS-PHASE CHEMISTRY IN THE SILICON DOPING OF GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE AS THE GROUP-V SOURCE
Publication TypeJournal Article
Year of Publication1994
AuthorsRedwing, JM, Kuech, TF, Saulys, D, Gaines, DF
JournalJournal of Crystal Growth
Volume135
Pagination423-433
Date PublishedFeb
DOI10.1016/0022-0248(94)90130-9