The nature and impact of ZNO buffer layers on the initial stages of the hydride vapor phase epitaxy of GAN

TitleThe nature and impact of ZNO buffer layers on the initial stages of the hydride vapor phase epitaxy of GAN
Publication TypeJournal Article
Year of Publication2000
AuthorsGu, SL, Zhang, R, Sun, JX, Zhang, L, Kuech, TF
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Paginationart. no.-W3.15