Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy

TitleIntrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy
Publication TypeJournal Article
Year of Publication1998
AuthorsCederberg, JG, Bieg, B, Huang, JW, Stockman, SA, Peanasky, MJ, Kuech, TF
JournalJournal of Crystal Growth
Volume195
Pagination63-68
Date PublishedDec
DOI10.1016/s0022-0248(98)00677-0