The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

TitleThe impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy
Publication TypeJournal Article
Year of Publication2001
AuthorsGu, SL, Zhang, R, Shi, Y, Zheng, YD, Zhang, L, Dwikusuma, F, Kuech, TF
JournalJournal of Crystal Growth
Volume231
Pagination342-351
Date PublishedOct
DOI10.1016/s0022-0248(01)01464-6