High performance transistors via aligned polyfluorene-sorted carbon nanotubes

TitleHigh performance transistors via aligned polyfluorene-sorted carbon nanotubes
Publication TypeJournal Article
Year of Publication2014
AuthorsBrady, GJ, Joo, Y, Roy, SS, Gopalan, P, Arnold, MS
JournalApplied Physics Letters
Volume104
Date PublishedFeb
ISBN Number0003-6951
Abstract

We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of similar to 50 s-SWCNTs mu m(-1). At a channel length of 9 mu m the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 x 10(7) and 46 cm(2) V-1 s(-1), respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 mu S mu m(-1) and the on/off ratio is 4 x 10(5). These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices. (C) 2014 AIP Publishing LLC.

DOI10.1063/1.4866577