Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor

TitleGrowth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
Publication TypeJournal Article
Year of Publication1997
AuthorsBooker, GR, Daly, M, Klipstein, PC, Lakrimi, M, Kuech, TF, Li, J, Lyapin, SG, Mason, NJ, Murgatroyd, IJ, Portal, JC, Nicholas, RJ, Symons, DM, Vicente, P, Walker, PJ
JournalJournal of Crystal Growth
Volume170
Pagination777-782
Date PublishedJan
DOI10.1016/s0022-0248(96)00578-7