Epitaxial lateral overgrowth of GaN with chloride-based growth chemistries in both hydride and metalorganic vapor phase epitaxy

TitleEpitaxial lateral overgrowth of GaN with chloride-based growth chemistries in both hydride and metalorganic vapor phase epitaxy
Publication TypeJournal Article
Year of Publication1999
AuthorsZhang, R, Zhang, L, Hansen, DM, Boleslawski, MP, Chen, KL, Lu, DQ, Shen, B, Zheng, YD, Kuech, TF
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4