THE EFFECT OF CONTROLLED IMPURITY INCORPORATION ON INTERFACIAL ROUGHNESS IN GAAS/ALXGA1-XAS SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

TitleTHE EFFECT OF CONTROLLED IMPURITY INCORPORATION ON INTERFACIAL ROUGHNESS IN GAAS/ALXGA1-XAS SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Publication TypeJournal Article
Year of Publication1994
AuthorsRedwing, JM, Nayak, S, Savage, DE, Lagally, MG, Dawsonelli, DF, Kuech, TF
JournalJournal of Crystal Growth
Volume145
Pagination792-798
Date PublishedDec
DOI10.1016/0022-0248(94)91144-4