CONTROLLED OXYGEN INCORPORATION IN INDIUM GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

TitleCONTROLLED OXYGEN INCORPORATION IN INDIUM GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Publication TypeJournal Article
Year of Publication1995
AuthorsHuang, JW, Ryan, JM, Bray, KL, Kuech, TF
JournalJournal of Electronic Materials
Volume24
Pagination1539-1546
Date PublishedNov
DOI10.1007/bf02676808