Publications

Luo GF, Yang SJ, Jenness GR, Song ZW, Kuech TF, Morgan D. Understanding and reducing deleterious defects in the metastable alloy GaAsBi. Npg Asia Materials. 2017;9.
Laskar MR, Jackson DHK, Xu SZ, Hamers RJ, Morgan D, Kuech TF. Atomic Layer Deposited MgO: A Lower Overpotential Coating for Li Ni0.5Mn0.3Co0.2 O-2 Cathode. ACS Applied Materials & Interfaces. 2017;9:11231-11239.
Bell BM, Clark MB, Devore DD, De Vries TS, Froese RD, Gray KC, et al.. Degradation of Hole Transport Materials via Exciton-Driven Cyclization. ACS Applied Materials & Interfaces. 2017;9:13369-13379.
Kim H, Guan YX, Forghani K, Kuech TF, Mawst LJ. Laser diodes employing GaAs1-xBix/GaAs1-yPy quantum well active regions. Semiconductor Science and Technology. 2017;32.
Kim Y, Jackson DHK, Lee D, Choi M, Kim TW, Jeong SY, et al.. In Situ Electrochemical Activation of Atomic Layer Deposition Coated MoS2 Basal Planes for Efficient Hydrogen Evolution Reaction. Advanced Functional Materials. 2017;27.
Wood AW, Chen WX, Kim H, Guan YX, Forghani K, Anand A, et al.. Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-xBix explored by atom probe tomography and HAADF-STEM. Nanotechnology. 2017;28.
Jackson DHK, Laskar MR, Fang S, Xu S, Ellis RG, Li X, et al.. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and FilmsJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. AVS Science and Technology Society; 2016;34.
Laskar MR, Jackson DHK, Guan YX, Xu SZ, Fang SY, Dreibelbis M, et al.. Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li Ni0.5Mn0.3Co0.2 O-2 Cathode to Improve Rate Performance in Li-Ion Battery. ACS Applied Materials & Interfaces. 2016;8:10572-10580.
Jackson DHK, Laskar MR, Fang SY, Xu SZ, Ellis RG, Li XQ, et al.. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes. Journal of Vacuum Science & Technology A. 2016;34.
Jackson DHK, Laskar MR, Fang SY, Xu SZ, Ellis RG, Li XQ, et al.. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes. Journal of Vacuum Science & Technology A. 2016;34.
Guan YX, Forghani K, Schulte KL, Babcock S, Mawst L, Kuech TF. Enhanced Incorporation of P into Tensile-Strained GaAs1-yPy Layers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures. Ecs Journal of Solid State Science and Technology. 2016;5:P183-P189.
Li JC, Collar K, Jiao WY, Kong W, Kuech TF, Babcock SE, et al.. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix. Applied Physics Letters. 2016;108.
Johnson PS, Boukahil I, Himpsel FJ, Kearns KL, Kang JH, Lin JC, et al.. Multitechnique Approach for Determining Energy Levels and Exciton Binding Energies of Molecules for Organic Electronics. Journal of Physical Chemistry C. 2016;120:1366-1374.
Chen WX, Ronsheim PA, Wood AW, Forghani K, Guan YX, Kuech TF, et al.. Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1-xBix/GaAs superlattice. Journal of Crystal Growth. 2016;446:27-32.
Schulte KL, Simon J, Roy A, Reedy RC, Young DL, Kuech TF, et al.. Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor. Journal of Crystal Growth. 2016;434:138-147.
Luo GF, Forghani K, Kuech TF, Morgan D. First-principles predictions of electronic properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based heterojunctions. Applied Physics Letters. 2016;109.
Ro I, Liu YF, Ball MR, Jackson DHK, Chada JP, Sener C, et al.. Role of the Cu-ZrO2 Interfacial Sites for Conversion of Ethanol to Ethyl Acetate and Synthesis of Methanol from CO2 and H-2. Acs Catalysis. 2016;6:7040-7050.
Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, et al.. Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics. Journal of Crystal Growth. 2016;452:276-280.
Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, et al.. Regrowth of quantum cascade laser active regions on metamorphic buffer layers. Journal of Crystal Growth. 2016;452:268-271.
Kim T, Wood A, Kim H, Kim Y, Lee J, Peterson M, et al.. Impact of Sb Incorporation on MOVPE-Grown "Bulk" InGaAs(Sb)N Films for Solar Cell Application. IEEE Journal of Photovoltaics. 2016;6:1673-1677.
Kuech TF, Babcock SE, Mawst L. Growth far from equilibrium: Examples from III-V semiconductors. Applied Physics Reviews. 2016;3.
Lee J, Burt SP, Carrero CA, Alba-Rubio AC, Ro I, O'Neill BJ, et al.. Stabilizing cobalt catalysts for aqueous-phase reactions by strong metal-support interaction. Journal of Catalysis. 2015;330:19-27.
Jackson DHK, O'Neill BJ, Lee J, Huber GW, Dumesic JA, Kuech TF. Tuning Acid-Base Properties Using Mg-Al Oxide Atomic Layer Deposition. ACS Applied Materials & Interfaces. 2015;7:16573-16580.
Kim HJ, Jackson DHK, Lee J, Guan YX, Kuech TF, Huber GW. Enhanced Activity and Stability of TiO2-Coated Cobalt/Carbon Catalysts for Electrochemical Water Oxidation. Acs Catalysis. 2015;5:3463-3469.
Li JC, Forghani K, Guan YX, Jiao WY, Kong W, Collar K, et al.. GaAs1-yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation. Aip Advances. 2015;5.
O'Neill BJ, Jackson DHK, Lee J, Canlas C, Stair PC, Marshall CL, et al.. Catalyst Design with Atomic Layer Deposition. Acs Catalysis. 2015;5:1804-1825.
Wood AW, Guan Y, Forghani K, Anand A, Kuech TF, Babcock SE. Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1-xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging. Apl Materials. 2015;3.
Wheatley R, Kesaria M, Mawst LJ, Kirch JD, Kuech TF, Marshall A, et al.. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP. Applied Physics Letters. 2015;106.
Schulte KL, Strand MT, Kuech TF. Evolution of epilayer tilt in thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy. Journal of Crystal Growth. 2015;426:283-286.
Luo GF, Yang SJ, Li JC, Arjmand M, Szlufarska I, Brown AS, et al.. First-principles studies on molecular beam epitaxy growth of GaAs1-xBix. Physical Review B. 2015;92.
Kim T, Mawst LJ, Kim Y, Kim K, Lee J, Kuech TF. 13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE. Journal of Vacuum Science & Technology A. 2015;33.
Kim H, Forghani K, Guan Y, Luo G, Anand A, Morgan D, et al.. Strain-compensated GaAs1-yPy/GaAs1-zBiz/GaAs1-yPy quantum wells for laser applications. Semiconductor Science and Technology. 2015;30.
Forghani K, Guan YX, Wood A, Babock S, Mawst L, Kuech TF. The Effect of the Bi Precursors, (CH3)(3)Bi and (C2H5)(3)Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiy Films. Chemical Vapor Deposition. 2015;21:166-175.
Chang CC, Kirch JD, Buelow P, Boyle C, Kuech TF, Lindberg D, et al.. Buried-heterostructure mid-infrared quantum cascade lasers fabricated by non-selective regrowth and chemical polishing. Electronics Letters. 2015;51:1098-1099.
Zou XB, Lu X, Lucas R, Kuech TF, Choi JW, Gopalan P, et al.. Growth and characterization of horizontal GaN wires on silicon. Applied Physics Letters. 2014;104.
Zou XB, Lu X, Lucas R, Kuech TF, Choi JW, Gopalan P, et al.. Growth and characterization of horizontal GaN wires on silicon. Applied Physics Letters. 2014;104.
Mawst LJ, Kirch JD, Kim T, Garrod T, Boyle C, Botez D, et al.. Low-strain, quantum-cascade-laser active regions grown on metamorphic buffer layers for emission in the 3.0-4.0 mu m wavelength region. Iet Optoelectronics. 2014;8:25-32.
O'Neill BJ, Sener C, Jackson DHK, Kuech TF, Dumesic JA. Control of Thickness and Chemical Properties of Atomic Layer Deposition Overcoats for Stabilizing Cu/gamma-Al2O3 Catalysts. Chemsuschem. 2014;7:3247-3251.
Li JC, Kim TH, Forghani K, Jiao WY, Kong W, Collar K, et al.. Growth of GaAs1-xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics. Journal of Applied Physics. 2014;116.
Lee JC, Jackson DHK, Li T, Winans RE, Dumesic JA, Kuech TF, et al.. Enhanced stability of cobalt catalysts by atomic layer deposition for aqueous-phase reactions. Energy & Environmental Science. 2014;7:1657-1660.
Kim Y, Kim K, Kim TW, Mawst LJ, Kuech TF, Kim CZ, et al.. InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition. Solar Energy. 2014;102:126-130.
Kim TW, Kuech TF, Mawst LJ. Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application. Journal of Crystal Growth. 2014;405:87-91.
Kim TW, Kim K, Lee JJ, Kuech TF, Mawst LJ, Wells NP, et al.. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 2014;104.
Kim TW, Forghani K, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, et al.. Properties of 'bulk' GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration. Journal of Crystal Growth. 2014;393:70-74.
Jackson DHK, Dunn BA, Guan YX, Kuech TF. Tungsten hexacarbonyl and hydrogen peroxide as precursors for the growth of tungsten oxide thin films on titania nanoparticles. AIChE Journal. 2014;60:1278-1286.
Forghani K, Guan YX, Wood AW, Anand A, Babcock SE, Mawst LJ, et al.. Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy. Journal of Crystal Growth. 2014;395:38-45.
Zutter BT, Schulte KL, Kim TW, Mawst LJ, Kuech TF, Foran B, et al.. Planarization and Processing of Metamorphic Buffer Layers Grown by Hydride Vapor-Phase Epitaxy. Journal of Electronic Materials. 2014;43:873-878.
Schulte KL, Zutter BT, Wood AW, Babcock SE, Kuech TF. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy. Semiconductor Science and Technology. 2014;29.
Schulte KL, Wood AW, Reedy RC, Ptak AJ, Meyer NT, Babcock SE, et al.. Heteroepitaxy of GaAs on (001) double right arrow 6 degrees Ge substrates at high growth rates by hydride vapor phase epitaxy. Journal of Applied Physics. 2013;113.
Schulte KL, Garrod TJ, Kim TW, Kirch J, Ruder S, Mawst LJ, et al.. Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy. Journal of Crystal Growth. 2013;370:293-298.
O'Neill BJ, Jackson DHK, Crisci AJ, Farberow CA, Shi FY, Alba-Rubio AC, et al.. Stabilization of Copper Catalysts for Liquid-Phase Reactions by Atomic Layer Deposition. Angewandte Chemie-International Edition. 2013;52:13808-13812.
Mawst LJ, Kirch JD, Chang CC, Kim T, Garrod T, Botez D, et al.. InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 mu m-emitting quantum-cascade-laser active regions. Journal of Crystal Growth. 2013;370:230-235.
Kim TW, Garrod TJ, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, et al.. Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE). Journal of Crystal Growth. 2013;370:163-167.
Jackson DHK, Wang D, Gallo JMR, Crisci AJ, Scott SL, Dumesic JA, et al.. Amine Catalyzed Atomic Layer Deposition of (3-Mercaptopropyl)trimethoxysilane for the Production of Heterogeneous Sulfonic Acid Catalysts. Chemistry of Materials. 2013;25:3844-3851.
Huang YG, Kim TW, Long SS, Mawst LJ, Kuech TF, Nealey PF, et al.. InAs Nanowires Grown by Metal-Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning. Nano Letters. 2013;13:5979-5984.
Forghani K, Anand A, Mawst LJ, Kuech TF. Low temperature growth of GaAs1-yBiy epitaxial layers. Journal of Crystal Growth. 2013;380:23-27.
Chang CC, Botez D, Wan L, Nealey PF, Ruder S, Kuech TF. Fabrication of large-area, high-density Ni nanopillar arrays on GaAs substrates using diblock copolymer lithography and electrodeposition. Journal of Vacuum Science & Technology B. 2013;31.
Dedigama A, Angelo M, Torrione P, Kim TH, Wolter S, Lampert W, et al.. Hemin-Functionalized InAs-Based High Sensitivity Room Temperature NO Gas Sensors. Journal of Physical Chemistry C. 2012;116:826-833.
Cho E, Yitamben EN, Iski EV, Guisinger NP, Kuech TF. Atomic-Scale Investigation of Highly Stable Pt Clusters Synthesized on a Graphene Support for Catalytic Applications. Journal of Physical Chemistry C. 2012;116:26066-26071.
Cho E, Brown A, Kuech TF. Chemical Characterization of DNA-Immobilized InAs Surfaces Using X-ray Photoelectron Spectroscopy and Near-Edge X-ray Absorption Fine Structure. Langmuir. 2012;28:11899-11907.
Wiedmann MK, Jackson DHK, Pagan-Torres YJ, Cho E, Dumesic JA, Kuech TF. Atomic layer deposition of titanium phosphate on silica nanoparticles. Journal of Vacuum Science & Technology A. 2012;30.
Schulte KL, Rance WL, Reedy RC, Ptak AJ, Young DL, Kuech TF. Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs. Journal of Crystal Growth. 2012;352:253-257.
Paulson CA, Jha S, Song X, Rathi M, Babcock SE, Mawst L, et al.. The effect of helium ion implantation on the relaxation of strained InGaAs thin films. Thin Solid Films. 2012;520:2147-2154.
Kim TW, Garrod TJ, Kim K, Lee JJ, LaLumondiere SD, Sin Y, et al.. Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 2012;100.
Jacobsen H, Puchala B, Kuech TF, Morgan D. Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs. Physical Review B. 2012;86.
Kuech TF. The 16th International Conference on Crystal Growth (ICCG16) Beijing, China 8-13 August 2010 preface. Journal of Crystal Growth. 2011;318:1-2.
Kirch J, Kim TW, Konen J, Mawst LJ, Kuech TF, Kuan TS. Effects of antimony (Sb) incorporation on MOVPE grown InAsyP1-y metamorphic buffer layers on InP substrates. Journal of Crystal Growth. 2011;315:96-101.
Jha S, Wiedmann MK, Kuech TF. A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy. Journal of Crystal Growth. 2011;315:87-90.
Jha S, Wiedmann MK, Kuan TS, Song XY, Babcock SE, Kuech TF. Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography. Journal of Crystal Growth. 2011;315:91-95.
Garrod TJ, Kirch J, Dudley P, Kim S, Mawst LJ, Kuech TF. Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications. Journal of Crystal Growth. 2011;315:68-73.
Chen WN, Alford TL, Kuech TF, Lau SS. High electron mobility transistors on plastic flexible substrates. Applied Physics Letters. 2011;98.
Chen W, Kuech TF, Lau SS. Ion-Cut Transfer of InP-Based High Electron Mobility Transistors. Journal of the Electrochemical Society. 2011;158:H727-H732.
Chen CT, Kuech TF, Nishinaga T, Zheng LL. The 16th International Conference on Crystal Growth (ICCG16) Beijing, China 8-13 August 2010 preface. Journal of Crystal Growth. 2011;318:3-3.
Staus CM, Kuech TF, McCaughan L. AlxGa1-xAs nested waveguide heterostructures for continuously phase-matched terahertz difference frequency generation. Optics Express. 2010;18:2332-2338.
Kuech TF, Mawst LJ. Nanofabrication of III-V semiconductors employing diblock copolymer lithography. Journal of Physics D-Applied Physics. 2010;43.
Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, et al.. InAS(y)P(1-y) metamorphic buffer layers on InP substrates for mid-IR diode lasers. Journal of Crystal Growth. 2010;312:1165-1169.
Gunawan AA, Jha S, Kuech TF. Growth of size and density controlled GaAs/InxGa1-xAs/GaAs (x=0.10) nanowires on anodic alumina membrane-assisted etching of nanopatterned GaAs. Journal of Vacuum Science & Technology B. 2010;28:1111-1119.
Fu HL, Yu B, Lo JY, Palmer GM, Kuech TF, Ramanujam N. A low-cost, portable, and quantitative spectral imaging system for application to biological tissues. Optics Express. 2010;18:12630-12645.
Chen W, Chen WV, Lee K, Lau SS, Kuech TF. High Quality InP Layers Transferred by Cleavage Plane Assisted Ion-Cutting. Electrochemical and Solid State Letters. 2010;13:H268-H270.
Uhlrich JJ, Franking R, Hamers RJ, Kuech TF. Sulfide Treatment of ZnO Single Crystals and Nanorods and the Effect on P3HT-ZnO Photovoltaic Device Properties. Journal of Physical Chemistry C. 2009;113:21147-21154.
Park B, Paoprasert P, Gopalan P, Kuech TF, Evans PG. Dynamics of photoinduced charge transfer between pentacene and a C-60-terminated self-assembled monolayer. Applied Physics Letters. 2009;94.
Uhlrich JJ, Franking R, Hamers RJ, Kuech TF. Sulfide Treatment of ZnO Single Crystals and Nanorods and the Effect on P3HT-ZnO Photovoltaic Device Properties. Journal of Physical Chemistry C. 2009;113:21147-21154.
Park B, Paoprasert P, Gopalan P, Kuech TF, Evans PG. Dynamics of photoinduced charge transfer between pentacene and a C-60-terminated self-assembled monolayer. Applied Physics Letters. 2009;94.
Park BN, Uhlrich JJ, Kuech TF, Evans PG. Electrical properties of GaN/poly(3-hexylthiophene) interfaces. Journal of Applied Physics. 2009;106.
Lo JY, Yu B, Fu HL, Bender JE, Palmer GM, Kuech TF, et al.. A strategy for quantitative spectral imaging of tissue absorption and scattering using light emitting diodes and photodiodes. Optics Express. 2009;17:1372-1384.
Jha S, Liu CC, Kuan TS, Babcock SE, Nealey PF, Park JH, et al.. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography. Applied Physics Letters. 2009;95.
Huang JYT, Mawst LJ, Kuech TF, Song X, Babcock SE, Kim CS, et al.. Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission. Journal of Physics D-Applied Physics. 2009;42.
Grabow LC, UhIrich JJ, Kuech TF, Mavrikakis M. Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces. Surface Science. 2009;603:387-399.
Chen WN, Bandaru P, Tang CW, Lau KM, Kuech TF, Lau SS. InP Layer Transfer with Masked Implantation. Electrochemical and Solid State Letters. 2009;12:H149-H150.
Chen W, Zhang A, Chen P, Pulsifer JE, Alford TL, Kuech TF, et al.. Feasibility Study of Ion-Cut InP Photoconductor Devices on Glass Substrates. Applied Physics Express. 2009;2.
Chen P, Chen WV, Yu PKL, Tang CW, Lau KM, Mawst L, et al.. Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon. Applied Physics Letters. 2009;94.
Uhlrich JJ, Olson DC, Hsu JWP, Kuech TF. Surface chemistry and surface electronic properties of ZnO single crystals and nanorods. Journal of Vacuum Science & Technology A. 2009;27:328-335.
Rathi MK, Tsvid G, Khandekar AA, Shin JC, Botez D, Kuech TF. Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures. Journal of Electronic Materials. 2009;38:2023-2032.
Rathi MK, Khandekar AA, Song XY, Babcock SE, Mawst LJ, Kuech TF. High antimony content GaAs1-zNz-GaAs1-ySby type-II "W" structure for long wavelength emission. Journal of Applied Physics. 2009;106.
Park JH, Liu CC, Rathi MK, Mawst LJ, Nealey PF, Kuech TF. Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning. J. Nanophotonics. 2009;3.
Park JH, Kirch J, Mawst LJ, Liu CC, Nealey PF, Kuech TF. Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography. Applied Physics Letters. 2009;95.
Kim H, Colavita PE, Paoprasert P, Gopalan P, Kuech TF, Hamers RJ. Grafting of molecular layers to oxidized gallium nitride surfaces via phosphonic acid linkages. Surface Science. 2008;602:2382-2388.
Kim H, Colavita PE, Paoprasert P, Gopalan P, Kuech TF, Hamers RJ. Grafting of molecular layers to oxidized gallium nitride surfaces via phosphonic acid linkages. Surface Science. 2008;602:2382-2388.
Huang JYT, Mawst LJ, Jha S, Kuech TF, Wang D, Shterengas L, et al.. MOVPE growth of Ga(As)SbN on GaSb substrates. Journal of Crystal Growth. 2008;310:4839-4842.
Chen W, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Integration of thin layers of single-crystalline InP with flexible substrates. Applied Physics Letters. 2008;92.
Chen P, Jing Y, Lau SS, Xu DP, Mawst L, Alford TL, et al.. High crystalline-quality III-V layer transfer onto Si substrate. Applied Physics Letters. 2008;92.
Zhang JL, Kuech TF. Fabrication and properties of an asymmetric waveguide containing nanoparticles. Journal of Electronic Materials. 2008;37:135-144.
Yu B, Lo JY, Kuech TF, Palmer GM, Bender JE, Ramanujam N. Cost-effective diffuse reflectance spectroscopy device for quantifying tissue absorption and scattering in vivo. Journal of Biomedical Optics. 2008;13.
Uhlrich JJ, Grabow LC, Mavrikakis M, Kuech TF. Practical surface treatments and surface chemistry of n-type and p-type GaN. Journal of Electronic Materials. 2008;37:439-447.
Su N, Tang Y, Zhang Z, Kuech TF, Fay P. Observation and control of electrochemical etching effects in the fabrication of InAs/AlSb/GaSb heterostructure devices. Journal of Vacuum Science & Technology B. 2008;26:1025-1029.
Song X, Babcock SE, Paulson CA, Kuech TF, Huang JYT, Xu DP, et al.. Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP. Journal of Crystal Growth. 2008;310:2377-2381.
Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song XY, et al.. MOVPE growth of antimonide-containing alloy materials for long wavelength applications. Journal of Crystal Growth. 2008;310:4826-4830.
Kuech TF, Babcock SE. Editors' preface to the ICCG-15 conference and the 13th OMVPE workshop proceedings. Journal of Crystal Growth. 2008;310:2307-2307.
Kortunova EV, Nikolaeva NG, Chvanski PP, Maltsev VV, Volkova EA, Koporulina EV, et al.. Hydrothermal synthesis of improved ZnO crystals for epitaxial growth of GaN thin films. Journal of Materials Science. 2008;43:2336-2341.
Jha S, Song XY, Babcock SE, Kuech TF, Wheeler D, Wu B, et al.. Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2008;310:4772-4775.
Huang JYT, Xu DP, Song X, Babcock SE, Kuech TF, Mawst LJ. Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates. Journal of Crystal Growth. 2008;310:2382-2389.
Xu DP, Huang JYT, Park JH, Mawst LJ, Kuech TF, Vurgaftman I, et al.. Characteristics of dilute-nitride GaAsSbN/InP strained multiple quantum wells. Applied Physics Letters. 2007;90.
Xu DP, Huang JYT, Park J, Mawst LJ, Kuech TF, Song X, et al.. Annealing of dilute-nitride GaAsSbN/InP strained multiple quantum wells. Applied Physics Letters. 2007;91.
Uhlrich J, Garcia M, Wolter S, Brown AS, Kuech TF. Interfacial chemistry and energy band line-up of pentacene with the GaN (0001) surface. Journal of Crystal Growth. 2007;300:204-211.
Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Development of lateral epitaxial overgrown InAs microstructure on patterned (100)GaAs substrates. Journal of Optoelectronics and Advanced Materials. 2007;9:1242-1245.
Slotte J, Gonzalez-Debs M, Kuech TF, Cederberg JG. Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures. Journal of Applied Physics. 2007;102.
Liu N, Kuech TF. Interfacial chemistry of InP/GaAs bonded pairs. Journal of Electronic Materials. 2007;36:179-190.
Khandekar AA, Yeh JY, Mawst LJ, Song XY, Babcock SE, Kuech TF. Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2007;298:154-158.
Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2007;303:456-465.
Huang JYT, Xu DR, Mawst LJ, Kuech TF, Vurgaftman I, Meyer JR. GaAsSbN-GaAsSb-InP type-II "W" quantum wells for mid-IR emission. Ieee Journal of Selected Topics in Quantum Electronics. 2007;13:1065-1073.
Huang JYT, Xu DP, Park JH, Mawst LJ, Kuech TF, Song X, et al.. Characteristics of strained GaAs1-ySby (0.16 <= y <= 0.69) quantum wells on InP substrates. Journal of Physics D-Applied Physics. 2007;40:7656-7661.
Gokhale AA, Kuech TF, Mavrikakis M. A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growth. Journal of Crystal Growth. 2007;303:493-499.
Clayton AJ, Khandekar AA, Kuech TF, Mason NJ, Robinson MF, Watkins S, et al.. Growth of AIN by vectored flow epitaxy. Journal of Crystal Growth. 2007;298:328-331.
Chen W, Chen P, Jing Y, Lau SS, Kuech TF, Liu JR, et al.. Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process. Applied Physics Letters. 2007;90.
Allen CG, Dorr JC, Khandekar AA, Beach JD, Schick IC, Schick EJ, et al.. Microcontact printing of indium metal using salt solution "ink". Thin Solid Films. 2007;515:6812-6816.
Kim NH, Park JH, Mawst LJ, Kuech TF, Kanskar M. Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD. Ieee Photonics Technology Letters. 2006;18:989-991.
Debs MG, Kuech TF. Phenomenological modeling of diffusion profiles: Sn in GaAs. Journal of Applied Physics. 2006;99.
Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, et al.. Characteristics of InGaAsN-GaAsSb type-II "W" quantum wells. Journal of Crystal Growth. 2006;287:615-619.
Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, et al.. Long wavelength emission of InGaAsN/GaAsSb type II "W" quantum wells. Applied Physics Letters. 2006;88.
Rathi MK, Hawkins BE, Kuech TF. Growth behavior of GaSb by metal-organic vapor-phase epitaxy. Journal of Crystal Growth. 2006;296:117-128.
Park JH, Khandekar AA, Park SM, Mawst LJ, Kuech TF, Nealey PF. Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers. Journal of Crystal Growth. 2006;297:283-288.
Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, et al.. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers. Langmuir. 2006;22:8121-8126.
Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (100) GaAs. Journal of Crystal Growth. 2006;292:40-52.
Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, et al.. Photochemical Functionalization of Gallium Nitride Thin Films with Molecular and Biomolecular Layers. Langmuir. 2006;22:8121-8126.
Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, et al.. Photochemical Functionalization of Gallium Nitride Thin Films with Molecular and Biomolecular Layers. Langmuir. 2006;22:8121-8126.
Liu N, Kuech TF. Changes in interfacial bonding energies in the chemical activation of GaAs surfaces. Journal of Electronic Materials. 2005;34:1010-1015.
Kim NH, Ramamurthy P, Mawst LJ, Kuech TF, Modak P, Goodnough TJ, et al.. Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1-xPx. Journal of Applied Physics. 2005;97.
Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. InAs growth and development of defect microstructure on GaAs. Journal of Crystal Growth. 2005;275:E1067-E1071.
Khandekar AA, Hawkins BE, Kuech TF, Yeh JY, Mawst LJ, Meyer JR, et al.. Characteristics of GaAsN/GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates. Journal of Applied Physics. 2005;98.
Gonzalez-Debs M, Cederberg JG, Biefeld RM, Kuech TF. Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb/GaSb quantum well interfaces. Journal of Applied Physics. 2005;97.
Gokhale AA, Kuech TF, Mavrikakis M. Surfactant effect of Sb on GaN growth. Journal of Crystal Growth. 2005;285:146-155.
Wu J, Walukiewicz W, Yu KM, Denlinger JD, Shan W, Ager JW, et al.. Valence band hybridization in N-rich GaN1-xAsx alloys. Physical Review B. 2004;70.
Liu ZY, Saulys DA, Kuech TF. Improved characteristics for Au/n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation. Applied Physics Letters. 2004;85:4391-4393.
Liu ZY, Gokhale AA, Mavrikakis M, Saulys DA, Kuech TF. Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te. Journal of Applied Physics. 2004;96:4302-4307.
Kimura A, Tang HF, Kuech TF. Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2004;265:71-77.
Kimura A, Paulson CA, Tang HF, Kuech TF. Epitaxial GaN1-yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy. Applied Physics Letters. 2004;84:1489-1491.
Kimura A, Liu ZY, Kuech TF. Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy. Journal of Crystal Growth. 2004;272:432-437.
Hawkins BE, Khandekar AA, Yeh JY, Mawst LJ, Kuech TF. Effects of gas switching sequences on GaAs/GaAs1-Sb-y(y) superlattices. Journal of Crystal Growth. 2004;272:686-693.
Beach JD, Veauvy C, Caputo R, Collins RT, Khandekar AA, Kuech TF, et al.. Formation of regular arrays of submicron GaAs dots on silicon. Applied Physics Letters. 2004;84:5323-5325.
Wang F, Zhang R, Xiu XQ, Chen KL, Gu SL, Shen B, et al.. Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching. Materials Letters. 2003;57:1365-1368.
Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, et al.. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN. Applied Physics Letters. 2003;82:3254-3256.
Wang F, Zhang R, Xiu XQ, Chen KL, Gu SL, Shen B, et al.. Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching. Materials Letters. 2003;57:1365-1368.
Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, et al.. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN. Applied Physics Letters. 2003;82:3254-3256.
Kim JK, Jang HW, Kim CC, Je JH, Rickert KA, Kuech TF, et al.. Microstructural study of Pt contact on p-type GaN. Journal of Vacuum Science & Technology B. 2003;21:87-90.
Hsu JWP, Schrey FF, Matthews MJ, Gu SL, Kuech TF. Impurity effects on photoluminescence in lateral epitaxially overgrown GaN. Journal of Electronic Materials. 2003;32:322-326.
Dwikusuma F, Mayer J, Kuech TF. Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy. Journal of Crystal Growth. 2003;258:65-74.
Dwikusuma F, Kuech TF. X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism. Journal of Applied Physics. 2003;94:5656-5664.
Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates. Applied Physics Letters. 2003;83:1977-1979.
Rehder EM, Inoki CK, Kuan TS, Kuech TF. SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study. Journal of Applied Physics. 2003;94:7892-7903.
Liu ZY, Kuech TF, Saulys DA. A comparative study of GaSb(100) surface passivation by aqueous and nonaqueous solutions. Applied Physics Letters. 2003;83:2587-2589.
Liu ZY, Hawkins B, Kuech TF. Chemical and structural characterization of GaSb(100) surfaces treated by HCI-based solutions and annealed in vacuum. Journal of Vacuum Science & Technology B. 2003;21:71-77.
Wang F, Zhang R, Tan WS, Xiu XQ, Lu DQ, Gu SL, et al.. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy. Applied Physics Letters. 2002;80:4765-4767.
Rickert KA, Ellis AB, Kim JK, Lee JL, Himpsel FJ, Dwikusuma F, et al.. X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN. Journal of Applied PhysicsJournal of Applied Physics. 2002;92:6671-6678.
Rickert KA, Ellis AB, Himpsel FJ, Sun J, Kuech TF. n-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy. Applied Physics Letters. 2002;80:204-206.
Paulson CA, Ellis AB, Moran PD, Kuech TF. Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy. Journal of Applied PhysicsJournal of Applied Physics. 2002;91:2785-2790.
Condren SM, Breitzer JG, Payne AC, Ellis AB, Widstrand CG, Kuech TF. Student-centered, nanotechnology-enriched introductory college chemistry courses for engineering students. International Journal of Engineering Education. 2002;18:550-556.
Wang F, Zhang R, Tan WS, Xiu XQ, Lu DQ, Gu SL, et al.. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy. Applied Physics Letters. 2002;80:4765-4767.
Rickert KA, Ellis AB, Kim JK, Lee JL, Himpsel FJ, Dwikusuma F, et al.. X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN. Journal of Applied Physics. 2002;92:6671-6678.
Rickert KA, Ellis AB, Himpsel FJ, Sun J, Kuech TF. n-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy. Applied Physics Letters. 2002;80:204-206.
Paulson CA, Ellis AB, Moran PD, Kuech TF. Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy. Journal of Applied Physics. 2002;91:2785-2790.
Condren SM, Breitzer JG, Payne AC, Ellis AB, Widstrand CG, Kuech TF. Student-centered, nanotechnology-enriched introductory college chemistry courses for engineering students. International Journal of Engineering Education. 2002;18:550-556.
Zhang L, Tang HF, Schieke J, Mavrikakis M, Kuech TF. Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2002;242:302-308.
Zhang L, Tang HF, Schieke J, Mavrikakis M, Kuech TF. The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy. Journal of Applied Physics. 2002;92:2304-2309.
Zhang L, Gu SL, Zhang R, Hansen DM, Boleslawski MP, Kuech TF. Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy. Journal of Crystal Growth. 2002;235:115-123.
Gu S, Zhang R, Shi Y, Zheng Y, Zhang L, Kuech TF. Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers. Applied Physics a-Materials Science & Processing. 2002;74:537-540.
Dwikusuma F, Saulys D, Kuech TF. Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments. Journal of the Electrochemical Society. 2002;149:G603-G608.
Babcock SE, Kuech TF, Jr JAFreitas. Bulk nitride semiconductors 2002 - Proceedings of the International Workshop on Bulk Nitride Semiconductors, Amazonas, Brazil, 18-23 May 2002 - Preface. Journal of Crystal Growth. 2002;246:VII-VII.
Ivanisevic A, Yeh JY, Mawst L, Kuech TF, Ellis AB. Semiconductor devices - Light-emitting diodes as chemical sensors. NatureNature. 2001;409:476-476.
Condren SM, Lisensky GC, Ellis AB, Nordell KJ, Kuech TF, Stockman SA. LEDs: New lamps for old and a paradigm for ongoing curriculum modernization. Journal of Chemical EducationJournal of Chemical Education. 2001;78:1033-1040.
Ivanisevic A, Yeh JY, Mawst L, Kuech TF, Ellis AB. Semiconductor devices - Light-emitting diodes as chemical sensors. Nature. 2001;409:476-476.
Condren SM, Lisensky GC, Ellis AB, Nordell KJ, Kuech TF, Stockman SA. LEDs: New lamps for old and a paradigm for ongoing curriculum modernization. Journal of Chemical Education. 2001;78:1033-1040.
Hsu JWP, Matthews MJ, Abusch-Magder D, Kleiman RN, Lang DV, Richter S, et al.. Spatial variation of electrical properties in lateral epitaxially overgrown GaN. Applied Physics Letters. 2001;79:761-763.
Hansen DM, Albaugh CE, Moran PD, Kuech TF. Chemical role of oxygen plasma in wafer bonding using borosilicate glasses. Applied Physics Letters. 2001;79:3413-3415.
Hansen DM, Albaugh CE, Moran PD, Kuech TF. Chemical investigations of GaAs wafer bonded interfaces. Journal of Applied Physics. 2001;90:5991-5999.
Gu SL, Zhang R, Shi Y, Zheng YD, Zhang L, Dwikusuma F, et al.. The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy. Journal of Crystal Growth. 2001;231:342-351.
Chowdhury A, Staus C, Boland BF, Kuech TF, McCaughan L. Experimental demonstration of 1535-1555-nm simultaneous optical wavelength interchange with a nonlinear photonic crystal. Optics Letters. 2001;26:1353-1355.
Zhang L, Tang HF, Kuech TF. Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy. Applied Physics Letters. 2001;79:3059-3061.
Yi SS, Moran PD, Zhang X, Cerrina F, Carter J, Smith HI, et al.. Oriented crystallization of GaSb on a patterned, amorphous Si substrate. Applied Physics Letters. 2001;78:1358-1360.
Moran PD, Kuech TF. Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates. Journal of Electronic Materials. 2001;30:802-806.
Moran PD, Chow D, Hunter A, Kuech TF. Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding. Applied Physics Letters. 2001;78:2232-2234.
Matthews MJ, Hsu JWP, Gu S, Kuech TF. Carrier density imaging of lateral epitaxially overgrown GaN using scanning confocal Raman microscopy. Applied Physics Letters. 2001;79:3086-3088.
Kuech TF. Bulk nitride growth and related techniques - International Specialist Meeting on Bulk Nitride Growth and Related Techniques - Foz Do Iguacu, Brazil, 12-16 November 2000 - Preface. Journal of Crystal Growth. 2001;231:VII-VII.
Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire. MRS Internet Journal of Nitride Semiconductor Research. 2000;5:art. no.-W2.11.
Gu SL, Zhang R, Sun JX, Zhang L, Kuech TF. The nature and impact of ZNO buffer layers on the initial stages of the hydride vapor phase epitaxy of GAN. MRS Internet Journal of Nitride Semiconductor Research. 2000;5:art. no.-W3.15.
Kuan TS, Inoki CK, Hsu Y, Harris DL, Zhang R, Gu S, et al.. Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 2000;5:art. no.-W2.6.
Zhang R, Shi Y, Zhou YG, Shen B, Zheng YD, Kuan TS, et al.. Structural properties of laterally overgrown GaN. MRS Internet Journal of Nitride Semiconductor Research. 2000;5.
Zheng Y, Moran PD, Guan ZF, Lau SS, Hansen DM, Kuech TF, et al.. Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding. Journal of Electronic Materials. 2000;29:916-920.
Zhang L, Gu SL, Kuech TF, Boleslawski MP. Gallium nitride growth using diethyl gallium chloride as an alternative gallium source. Journal of Crystal Growth. 2000;213:1-9.
Yi SS, Hansen DM, Inoki CK, Harris DL, Kuan TS, Kuech TF. Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition. Applied Physics Letters. 2000;77:842-844.
Watwe RM, Dumesic JA, Kuech TF. Gas-phase chemistry of metalorganic and nitrogen-bearing compounds. Journal of Crystal Growth. 2000;221:751-757.
Sun JX, Rickert KA, Redwing JM, Ellis AB, Himpsel FJ, Kuech TF. p-GaN surface treatments for metal contacts. Applied Physics Letters. 2000;76:415-417.
Sun JX, Redwing JM, Kuech TF. Model development of GaN MOVPE growth chemistry for reactor design. Journal of Electronic Materials. 2000;29:2-9.
Seker F, Meeker K, Kuech TF, Ellis AB. Surface chemistry of prototypical bulk II-VI and III-V semiconductors and implications for chemical sensing. Chemical Reviews. 2000;100:2505-2536.
Saulys D, Joshkin V, Khoudiakov M, Kuech TF, Ellis AB, Oktyabrsky SR, et al.. An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions. Journal of Crystal Growth. 2000;217:287-301.
Paulson C, Ellis AB, McCaughan L, Hawkins B, Sun JX, Kuech TF. Demonstration of near-field scanning photoreflectance spectroscopy. Applied Physics Letters. 2000;77:1943-1945.
Moran PD, Hansen DM, Matyi RJ, Mawst LJ, Kuech TF. Experimental test for elastic compliance during growth on glass-bonded compliant substrates. Applied Physics Letters. 2000;76:2541-2543.
Maxson JB, Perkins N, Savage DE, Woll AR, Zhang L, Kuech TF, et al.. Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy. Surface Science. 2000;464:217-222.
Joshkin VA, Moran P, Saulys D, Kuech TF, McCaughan L, Oktyabrsky SR. Growth of oriented lithium niobate on silicon by alternating gas flow chemical beam epitaxy with metalorganic precursors. Applied Physics Letters. 2000;76:2125-2127.
Herndon MK, Bradford WC, Collins RT, Hawkins BE, Kuech TF, Friedman DJ, et al.. Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells. Applied Physics Letters. 2000;77:100-102.
Hansen DM, Charters D, Au YL, Mak WK, Tejasukmana W, Moran PD, et al.. Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate. Journal of Electronic Materials. 2000;29:1312-1318.
Gu SL, Zhang R, Sun JX, Zhang L, Kuech TF. Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN. Applied Physics Letters. 2000;76:3454-3456.
Cederberg JG, Bieg B, Huang JW, Stockman SA, Peanasky MJ, Kuech TF. Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE. Journal of Electronic Materials. 2000;29:426-429.
Bieg B, Cederberg JG, Kuech TF. High-temperature hysteretic electronic effects of (AlxGa1-x)(0.5)In0.5P (x > 0.65). Journal of Electronic Materials. 2000;29:231-236.
Kim S, Li X, Coleman JJ, Zhang R, Hansen DM, Kuech TF, et al.. Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 1999;4.
Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of AlN on Si (111) deposited with metal organic vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 1999;4:art. no.-G3.56.
Reuter EE, Zhang R, Kuech TF, Bishop SG. Photoluminescence excitation spectroscopy of carbon-doped gallium nitride. MRS Internet Journal of Nitride Semiconductor Research. 1999;4:art. no.-G3.67.
Zhang L, Zhang R, Boleslawski MP, Kuech TF. Gallium nitride growth using diethylgallium chloride as an alternative gallium source. MRS Internet Journal of Nitride Semiconductor Research. 1999;4.
Zhang R, Zhang L, Hansen DM, Boleslawski MP, Chen KL, Lu DQ, et al.. Epitaxial lateral overgrowth of GaN with chloride-based growth chemistries in both hydride and metalorganic vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 1999;4.
Sun JX, Seo DJ, O'Brien WL, Himpsel FJ, Ellis AB, Kuech TF. Chemical bonding and electronic properties of SeS2-treated GaAs(100). Journal of Applied Physics. 1999;85:969-977.
Sun JX, Redwing JM, Kuech TF. Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride. Physica Status Solidi A-Applied Research. 1999;176:693-698.
Pfeiffer D, Ximba BJ, Liable-Sands LM, Rheingold AL, Heeg MJ, Coleman DM, et al.. Synthesis, structure, and molecular orbital studies of yttrium, erbium, and lutetium complexes bearing eta(2)-pyrazolato ligands: Development of a new class of precursors for doping semiconductors. Inorganic Chemistry. 1999;38:4539-4548.
Moran PD, Hansen DM, Matyi RJ, Redwing JM, Kuech TF. Realization and characterization of ultrathin GaAs-on-insulator structures. Journal of the Electrochemical Society. 1999;146:3506-3509.
Moran PD, Hansen DM, Matyi RJ, Cederberg JG, Mawst LJ, Kuech TF. InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality. Applied Physics Letters. 1999;75:1559-1561.
Li J, Kuech TF. Impurity incorporation and the surface morphology of MOVPE grown GaAs. Journal of Electronic Materials. 1999;28:124-133.
Ellis AB, Kuech TF, Lisensky GC, Campbell DJ, Condren SM, Nordell KJ. Making the nanoworld comprehensible: Instructional materials for schools and outreach. Journal of Nanoparticle Research. 1999;1:147-150.
Cederberg JG, Culp TD, Bieg B, Pfeiffer D, Winter CH, Bray KL, et al.. Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium. Journal of Applied Physics. 1999;85:1825-1831.
Gilliland GD, Petrovic MS, Hjalmarson HP, Wolford DJ, Northrop GA, Kuech TF, et al.. Time-dependent heterointerfacial band bending and quasi-two-dimensionl excitonic transport in GaAs structures. Physical Review B. 1998;58:4728-4732.
Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, et al.. Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films. Thin Solid Films. 1998;313:187-192.
Culp TD, Cederberg JG, Bieg B, Kuech TF, Bray KL, Pfeiffer D, et al.. Photoluminescence and free carrier interactions in erbium-doped GaAs. Journal of Applied Physics. 1998;83:4918-4927.
Cederberg JG, Culp TD, Bieg B, Pfeiffer D, Winter CH, Bray KL, et al.. Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium. Journal of Crystal Growth. 1998;195:105-111.
Cederberg JG, Bieg B, Huang JW, Stockman SA, Peanasky MJ, Kuech TF. Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy. Journal of Crystal Growth. 1998;195:63-68.
Campbell DJ, Lorenz JK, Ellis AB, Kuech TF, Lisensky GC, Whittingham MS. The computer as a materials science benchmark. Journal of Chemical Education. 1998;75:297-312.
Bandic ZZ, Piquette EC, Bridger PM, Beach RA, Kuech TF, McGill TC. Nitride based high power devices: Design and fabrication issues. Solid-State Electronics. 1998;42:2289-2294.
Zhang R, Kuech TF. Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy. Applied Physics Letters. 1998;72:1611-1613.
Zhang R, Kuech TF. Hydrogen induced yellow luminescence in GaN grown by halide vapor phase epitaxy. Journal of Electronic Materials. 1998;27:L35-L39.
Winder EJ, Kuech TF, Ellis AB. Photoluminescence studies of cadmium selenide crystals in contact with group III trialkyl derivatives. Journal of the Electrochemical Society. 1998;145:2475-2479.
Sun JX, Zhang L, Kuech TF. In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy. Journal of Crystal Growth. 1998;195:711-717.
Rudkevich E, Liu F, Savage DE, Kuech TF, McCaughan L, Lagally MG. Hydrogen induced Si surface segregation on Ge-covered Si(001). Physical Review Letters. 1998;81:3467-3470.
Lorenz JK, Kuech TF, Ellis AB. Cadmium selenide photoluminescence as a probe for the surface adsorption of dialkyl chalcogenides. Langmuir. 1998;14:1680-1683.
Li J, Mirabedini A, Mawst LJ, Savage DE, Matyi RJ, Kuech TF. Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes. Journal of Crystal Growth. 1998;195:617-623.
Hansen DM, Zhang R, Perkins NR, Safvi S, Zhang L, Bray KL, et al.. Photoluminescence of erbium-implanted GaN and in situ-doped GaN : Er. Applied Physics Letters. 1998;72:1244-1246.
Hansen DM, Moran PD, Dunn KA, Babcock SE, Matyi RJ, Kuech TF. Development of a glass-bonded compliant substrate. Journal of Crystal Growth. 1998;195:144-150.
Buchwald WR, Jones KA, Zhao JH, Huang JW, Kuech TF. A comparison of pnpn and oxygen-doped pn-i-pn GaAs thyristors. IEEE Transactions on Electron Devices. 1997;44:1154-1157.
Brainard RJ, Paulson CA, Saulys D, Gaines DF, Kuech TF, Ellis AB. Modulation of cadmium selenide photoluminescence intensity by adsorption of silapentanes and chlorinated silanes. Journal of Physical Chemistry B. 1997;101:11180-11184.
Botez D, Mawst LJ, Bhattacharya A, Lopez J, Li J, Kuech TF, et al.. 6W CW front-facet power from short-cavity (0.5 mm), 100 mu m stripe Al-free 0.98 mu m-emitting diode lasers. Electronics Letters. 1997;33:2037-2039.
Booker GR, Daly M, Klipstein PC, Lakrimi M, Kuech TF, Li J, et al.. Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor. Journal of Crystal Growth. 1997;170:777-782.
Thon A, Saulys D, Safvi SA, Gaines DF, Kuech TF. A mass spectroscopic study of the vapor phase thermal decomposition of trimethylamine. Journal of the Electrochemical Society. 1997;144:1127-1130.
Safvi SA, Redwing JM, Tischler MA, Kuech TF. GaN growth by metallorganic vapor phase epitaxy - A comparison of modeling and experimental measurements. Journal of the Electrochemical Society. 1997;144:1789-1796.
Safvi SA, Perkins NR, Horton MN, Matyi R, Kuech TF. Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN/sapphire grown by hydride vapor-phase epitaxy. Journal of Crystal Growth. 1997;182:233-240.
Safvi SA, Liu J, Kuech TF. Spatial resolution of localized photoluminescence by near-field scanning optical microscopy. Journal of Applied Physics. 1997;82:5352-5359.
Rudkevich E, Savage DE, Cai W, Bean JC, Sullivan JS, Nayak S, et al.. Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1997;15:2153-2157.
Rudkevich E, Saulys D, Gaines D, Kuech TF, McCaughan L. Adsorption and decomposition studies of t-butyl silane on Si(100)-(2x1) surfaces using FTIR-ATR spectroscopy. Surface Science. 1997;383:69-77.
Liu QZ, Yu LS, Lau SS, Redwing JM, Perkins NR, Kuech TF. Thermally stable PtSi Schottky contact on n-GaN. Applied Physics Letters. 1997;70:1275-1277.
Liu QZ, Shen L, Smith KV, Tu CW, Yu ET, Lau SS, et al.. Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy. Applied Physics Letters. 1997;70:990-992.
Liu JT, Zhi D, Redwing JM, Tischler MA, Kuech TF. GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction. Journal of Crystal Growth. 1997;170:357-361.
Li J, Kuech TF. Surface morphology of carbon-doped GaAs grown by MOVPE. Journal of Crystal Growth. 1997;170:292-296.
Li J, Kuech TF. Evolution of surface structure during carbon doping in the metal-organic vapor-phase epitaxial growth of GaAs. Journal of Crystal Growth. 1997;181:171-180.
Kang JU, Frankel MY, Huang JW, Kuech TF. Ultrafast carrier trapping in oxygen-doped metal-organic vapor phase epitaxy GaAs. Applied Physics Letters. 1997;70:1560-1562.
Ingerly DB, Chang YA, Perkins NR, Kuech TF. Ohmic contacts to n-GaN using PtIn2. Applied Physics Letters. 1997;70:108-110.
Geisz JF, Safvi SA, Kuech TF. Photoreflectance study of the long-term stability of various surface chemical treatments on (001) n-GaAs. Journal of the Electrochemical Society. 1997;144:732-736.
Ellis AB, Brainard RJ, Kepler KD, Moore DE, Winder EJ, Kuech TF, et al.. Modulation of the photoluminescence of semiconductors by surface adduct formation: An application of inorganic photochemistry to chemical sensing. Journal of Chemical Education. 1997;74:680-684.
Edwards NV, Yoo SD, Bremser MD, Zheleva T, Horton MN, Perkins NR, et al.. Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 1997;50:134-141.
Edwards NV, Yoo SD, Bremser MD, Weeks TW, Nam OH, Davis RF, et al.. Variation of GaN valence bands with biaxial stress and quantification of residual stress. Applied Physics Letters. 1997;70:2001-2003.
Culp TD, Hommerich U, Redwing JM, Kuech TF, Bray KL. Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure. Journal of Applied Physics. 1997;82:368-374.
Cederberg JG, Bray KL, Kuech TF. Oxygen-related defects in low phosphorous content GaAs1-yPy grown by metal organic vapor phase epitaxy. Journal of Applied Physics. 1997;82:2263-2269.
Bhattacharya A, Mawst LJ, Nayak S, Li J, Kuech TF. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates. Applied Physics Letters. 1996;68:2240-2242.
Thon A, Kuech TF. High temperature adduct formation of trimethylgallium and ammonia. Applied Physics Letters. 1996;69:55-57.
Nayak S, Huang JW, Redwing JM, Savage DE, Lagally MG, Kuech TF. Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001). Applied Physics Letters. 1996;68:1270-1272.
Ma J, Garni B, Perkins N, Obrien WL, Kuech TF, Lagally MG. Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy. Applied Physics Letters. 1996;69:3351-3353.
Liu QZ, Lau SS, Perkins NR, Kuech TF. Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions. Applied Physics Letters. 1996;69:1722-1724.
Liu JT, Perkins NR, Horton MN, Redwing JM, Tischler MA, Kuech TF. A near-field scanning optical microscopy study of the photoluminescence from GaN films. Applied Physics Letters. 1996;69:3519-3521.
Liu JT, Kuech TF. A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation. Applied Physics Letters. 1996;69:662-664.
Kuech TF, Perkins NR. Metalorganic vapor phase epitaxy of II-VI materials for visible light emitters. Journal of Crystal Growth. 1996;166:558-565.
Kuech TF, Nayak S, Huang JW, Li J. Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs. Journal of Crystal Growth. 1996;163:171-179.
Huang JW, Kuech TF, Lu HQ, Bhat I. Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 1996;68:2392-2394.
Huang JW, Bray KL, Kuech TF. Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs. Journal of Applied Physics. 1996;80:6819-6826.
Garni B, Ma J, Perkins N, Liu JT, Kuech TF, Lagally MG. Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy. Applied Physics Letters. 1996;68:1380-1382.
Deng F, Liu QZ, Yu LS, Guan ZF, Lau SS, Redwing JM, et al.. Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors. Journal of Applied Physics. 1996;79:1763-1771.
Botez D, Mawst LJ, Bhattacharya A, Lopez J, Li J, Kuech TF, et al.. 66% CW wallplug efficiency from Al-free 0.98 mu m-emitting diode lasers. Electronics Letters. 1996;32:2012-2013.
Winder EJ, Moore DE, Neu DR, Ellis AB, Geisz JF, Kuech TF. DETECTION OF AMMONIA, PHOSPHINE, AND ARSINE GASES BY REVERSIBLE MODULATION OF CADMIUM SELENIDE PHOTOLUMINESCENCE INTENSITY. Journal of Crystal Growth. 1995;148:63-69.
Nayak S, Savage DE, Chu HN, Lagally MG, Kuech TF. In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD. Journal of Crystal Growth. 1995;157:168-171.
Liu QZ, Deng F, Yu LS, Guan ZF, Pappert SA, Yu PKL, et al.. PHOTOELASTIC WAVE-GUIDES AND THE CONTROLLED INTRODUCTION OF STRAIN IN III-V SEMICONDUCTORS BY MEANS OF THIN-FILM TECHNOLOGY. Journal of Applied Physics. 1995;78:236-244.
Lin CF, Chang YA, Pan N, Huang JW, Kuech TF. PDAL SCHOTTKY CONTACT TO IN0.52AL0.48AS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION. Applied Physics Letters. 1995;67:3587-3589.
Huang JW, Ryan JM, Bray KL, Kuech TF. CONTROLLED OXYGEN INCORPORATION IN INDIUM GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Electronic Materials. 1995;24:1539-1546.
Huang JW, Kuech TF, Anderson TJ. OXYGEN-BASED DEEP LEVELS IN METALORGANIC VAPOR-PHASE EPITAXY INDIUM GALLIUM-ARSENIDE. Applied Physics Letters. 1995;67:1116-1118.
Geisz JF, Kuech TF, Ellis AB. CHANGING PHOTOLUMINESCENCE INTENSITY FROM GAAS/AL0.3GA0.7AS HETEROSTRUCTURES UPON CHEMISORPTION OF SO2. Journal of Applied Physics. 1995;77:1233-1240.
Frankel MY, Huang JW, Kuech TF. ULTRAFAST PHOTODETECTOR MATERIALS BASED ON OXYGEN-DOPED METALORGANIC VAPOR-PHASE EPITAXY GAAS. Applied Physics Letters. 1995;66:634-636.
Chen CP, Chang YA, Kuech TF. SCHOTTKY-BARRIER ENHANCEMENT USING REACTED NI2AL3NI/N-GAAS, NI/AL/NI/N-GAAS, AND NIAL/AL/NI/N-GAAS CONTACTS. Journal of Applied Physics. 1995;77:4777-4782.
Huang JW, Gaines DF, Kuech TF, Potemski RM, Cardone F. ALKOXIDE PRECURSORS FOR CONTROLLED OXYGEN INCORPORATION DURING METALORGANIC VAPOR-PHASE EPITAXY GAAS AND ALXGA1-XAS GROWTH. Journal of Electronic Materials. 1994;23:659-667.
Hjalmarson HP, Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. TEMPERATURE-DEPENDENT RADIATIVE RECOMBINATION OF FREE-EXCITONS IN HIGH-QUALITY GAAS HETEROSTRUCTURES. Journal of Luminescence. 1994;60-1:830-833.
Geisz JF, Kuech TF, Lagally MG, Cardone F, Potemski RM. FILM STRESS OF SPUTTERED W/C MULTILAYERS AND STRAIN RELAXATION UPON ANNEALING. Journal of Applied Physics. 1994;75:1530-1533.
Wolford DJ, Gilliland GD, Kuech TF, Klem JF, Hjalmarson HP, Bradley JA, et al.. COMPARISON OF TRANSPORT, RECOMBINATION, AND INTERFACIAL QUALITY IN MOLECULAR-BEAM EPITAXY AND ORGANOMETALLIC VAPOR-PHASE EPITAXY GAAS/ALXGA1-XAS STRUCTURES. Applied Physics Letters. 1994;64:1416-1418.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. LUMINESCENCE KINETICS OF INTRINSIC EXCITONIC STATES QUANTUM-MECHANICALLY BOUND NEAR HIGH-QUALITY (N--TYPE GAAS)/(P-TYPE ALXGA1-XAS) HETEROINTERFACES. Physical Review B. 1994;49:8113-8125.
Ryan JM, Huang JW, Kuech TF, Bray KL. THE EFFECTS OF TEMPERATURE AND OXYGEN CONCENTRATION ON THE PHOTOLUMINESCENCE OF EPITAXIAL METALORGANIC VAPOR-PHASE EPITAXY GAASO. Journal of Applied Physics. 1994;76:1175-1179.
Redwing JM, Simka H, Jensen KF, Kuech TF. STUDY OF SILICON INCORPORATION FROM SIH4 IN GAAS-LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE. Journal of Crystal Growth. 1994;145:397-402.
Redwing JM, Nayak S, Savage DE, Lagally MG, Dawsonelli DF, Kuech TF. THE EFFECT OF CONTROLLED IMPURITY INCORPORATION ON INTERFACIAL ROUGHNESS IN GAAS/ALXGA1-XAS SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1994;145:792-798.
Redwing JM, Kuech TF, Saulys D, Gaines DF. STUDY OF THE GAS-PHASE CHEMISTRY IN THE SILICON DOPING OF GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLARSINE AS THE GROUP-V SOURCE. Journal of Crystal Growth. 1994;135:423-433.
Redwing JM, Kuech TF, Gordon DC, Vaartstra BA, Lau SS. GROWTH-STUDIES OF ERBIUM-DOPED GAAS DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY USING NOVEL CYCLOPENTADIENYL-BASED ERBIUM SOURCES. Journal of Applied Physics. 1994;76:1585-1591.
Kuech TF, Redwing JM. CARBON DOPING IN METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1994;145:382-389.
Huang JW, Kuech TF. MULTIPLE DEEP LEVELS IN METALORGANIC VAPORPHASE EPITAXY GAAS GROWN BY CONTROLLED OXYGEN INCORPORATION. Applied Physics Letters. 1994;65:604-606.
Huang JW, Kuech TF. ELECTRICAL CHARACTERIZATION OF SEMIINSULATING METALORGANIC VAPOR-PHASE EPITAXY GAAS GROWN BY CONTROLLED OXYGEN INCORPORATION. Journal of Crystal Growth. 1994;145:462-467.
Chen CP, Chang YA, Kuech TF. SCHOTTKY ENHANCEMENT OF REACTED NIAL N-GAAS CONTACTS. Applied Physics Letters. 1994;64:3485-3487.
Chen CP, Chang YA, Kuech TF. ENHANCEMENT OF SCHOTTKY-BARRIER HEIGHT TO N-GAAS USING NIAL, NIAL/AL/NI, AND NI/AL/NI LAYER STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1994;12:1915-1919.
Chen CP, Chang YA, Huang JW, Kuech TF. HIGH SCHOTTKY-BARRIER HEIGHT OF THE AL-N-GAAS DIODES ACHIEVED BY SPUTTER-DEPOSITION. Applied Physics Letters. 1994;64:1413-1415.
Wolford DJ, Gilliland GD, Kuech TF, Bradley JA, Hjalmarson HP. OPTICALLY DETERMINED MINORITY-CARRIER TRANSPORT IN GAAS/ALXGA1-X AS HETEROSTRUCTURES. Physical Review B. 1993;47:15601-15608.
Pant J, Pansewicz K, Zhang J, Hayes TM, Williamson DL, Theis TN, et al.. EVOLUTION OF SN ENVIRONMENT IN ALGAAS ALLOYS. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. 1993;32:731-733.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA, Hjalmarson HP. MINORITY-CARRIER RECOMBINATION KINETICS AND TRANSPORT IN SURFACE-FREE GAAS/ALXGA1-XAS DOUBLE HETEROSTRUCTURES. Journal of Applied Physics. 1993;73:8386-8396.
Gilliland GD, Wolford DJ, Hjalmarson HP, Petrovic MS, Klem J, Kuech TF, et al.. OPTICALLY-DETERMINED EXCITON TRANSPORT IN GAAS STRUCTURES. Acta Physica Polonica A. 1993;84:409-417.
Kuech TF. SELECTIVE EPITAXY OF COMPOUND SEMICONDUCTORS - NOVEL SOURCES. Semiconductor Science and Technology. 1993;8:967-978.
Masi M, Simka H, Jensen KF, Kuech TF, Potemski R. SIMULATION OF CARBON DOPING OF GAAS DURING MOVPE. Journal of Crystal Growth. 1992;124:483-492.
Kuech TF, Potemski R, Cardone F, Scilla G. QUANTITATIVE OXYGEN MEASUREMENTS IN OMVPE ALXGA1-XAS GROWN BY METHYL PRECURSORS. Journal of Electronic Materials. 1992;21:341-346.
Kuech TF, Potemski R, Cardone F. GROWTH-BEHAVIOR OF (C2H5)2GACL AND ASH3 BASED GAAS - LOW REACTOR PRESSURE AND TEMPERATURES. Journal of Crystal Growth. 1992;124:318-325.
Wolford DJ, Gilliland GD, Kuech TF, Bradley JA, Hjalmarson HP. OPTICALLY DETERMINED LOW-TEMPERATURE, HIGH-MOBILITY TRANSPORT IN INTERFACE-FREE GAAS HETEROSTRUCTURES. Institute of Physics Conference Series. 1992;:271-274.
Tischler MA, Latulipe D, Kuech TF, Magerlein JH, Hovel HJ. IMPROVED SCHOTTKY GATE CHARACTERISTICS FOR MOVPE-GROWN GAAS-MESFETS. Journal of Crystal Growth. 1992;124:824-828.
Gilliland GD, Wolford DJ, Northrop GA, Petrovic MS, Kuech TF, Bradley JA. INTERFACE STATES AND THE TRANSPORT OF 2-DIMENSIONAL INTERFACE EXCITONS IN ALGAAS/GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 1992;10:1959-1964.
Gilliland GD, Wolford DJ, Northrop GA, Kuech TF, Bradley JA. DYNAMICS AND TRANSPORT OF EXCITONS CONFINED AT HIGH-QUALITY GAAS/ALXGA1-XAS INTERFACES. Institute of Physics Conference Series. 1992;:413-418.
Cargill GS, Segmuller A, Kuech TF, Theis TN. LATTICE STRAIN FROM DX CENTERS AND PERSISTENT PHOTOCARRIERS IN SN-DOPED AND SI-DOPED GA1-XALXAS. Physical Review B. 1992;46:10078-10085.
Wolford DJ, Gilliland GD, Kuech TF, Martinsen J, Bradley JA, Tsang CF, et al.. INTERFACE-FREE GAAS STRUCTURES - FROM BULK TO THE QUANTUM LIMIT. Institute of Physics Conference Series. 1992;:401-406.
Phang YH, Savage DE, Kuech TF, Lagally MG, Park JS, Wang KL. X-RAY-DIFFRACTION DETERMINATION OF INTERFACIAL ROUGHNESS CORRELATION IN SIXGE1-X/SI AND GAAS/ALXGA1-XAS SUPERLATTICES. Applied Physics Letters. 1992;60:2986-2988.
Kuech TF. PERSPECTIVES ON METAL ORGANIC VAPOR-PHASE EPITAXY GROWTH - CHEMISTRY, STRUCTURES AND SYSTEMS. Thin Solid Films. 1992;216:77-83.
Kuech TF. RECENT ADVANCES IN METAL-ORGANIC VAPOR-PHASE EPITAXY. Proceedings of the Ieee. 1992;80:1609-1624.
Hierlemann MP, Kuech TF. 2-DIMENSIONAL MODELING OF THE GROWTH OF GAAS FROM (C2H5)2GACL AND ASH3. Journal of Crystal Growth. 1992;124:56-63.
Kuech TF, Goorsky MS, Tischler MA, Palevski A, Solomon P, Potemski R, et al.. SELECTIVE EPITAXY OF GAAS, ALXGA1-XAS, AND INXGA1-XAS. Journal of Crystal Growth. 1991;107:116-128.
Buchan NI, Kuech TF, Beach D, Scilla G, Cardone F. THE USE OF AZO-COMPOUNDS AS PROBES OF CARBON INCORPORATION OF NOMINALLY UNDOPED METALORGANIC VAPOR-PHASE EPITAXY GROWN GAAS. Journal of Applied Physics. 1991;69:2156-2160.
Annapragada AV, Jensen KF, Kuech TF. INFRARED SPECTROSCOPIC DETERMINATION OF SUBSTITUTIONAL CARBON IN MOVPE GROWN FILMS OF GAAS. Journal of Crystal Growth. 1991;107:248-253.
Wolford DJ, Gilliland GD, Kuech TF, Smith LM, Martinsen J, Bradley JA, et al.. INTRINSIC RECOMBINATION AND INTERFACE CHARACTERIZATION IN SURFACE-FREE GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 1991;9:2369-2376.
Wang LC, Wang XZ, Hsu SN, Lau SS, Lin PSD, Sands T, et al.. AN INVESTIGATION OF THE PD-IN-GE NONSPIKING OHMIC CONTACT TO N-GAAS USING TRANSMISSION-LINE MEASUREMENT, KELVIN, AND COX AND STRACK STRUCTURES. Journal of Applied Physics. 1991;69:4364-4372.
Tischler MA, Potemski RM, Kuech TF, Cardone F, Goorsky MS, Scilla G. ACCEPTOR DOPING OF (AL,GA)AS USING CARBON BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1991;107:268-273.
Lu CR, Anderson JR, Stone DR, Beard WT, Wilson RA, Kuech TF, et al.. TEMPERATURE AND DOPING-CONCENTRATION DEPENDENCE OF THE OSCILLATORY PROPERTIES OF THE PHOTOREFLECTANCE SPECTRA FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY. Physical Review B. 1991;43:11791-11797.
Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. THE TEMPERATURE-DEPENDENCE OF THE CONTACT RESISTIVITY OF THE SI/NI(MG) NONSPIKING CONTACT SCHEME ON P-GAAS. Journal of Applied Physics. 1991;69:3124-3129.
Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. THERMALLY STABLE AND NONSPIKING PD/SB(MN) OHMIC CONTACT TO P-GAAS. Applied Physics Letters. 1991;58:1617-1619.
Goorsky MS, Kuech TF, Tischler MA, Potemski RM. DETERMINATION OF EPITAXIAL ALXGA1-XAS COMPOSITION FROM X-RAY-DIFFRACTION MEASUREMENTS. Applied Physics Letters. 1991;59:2269-2271.
Goorsky MS, Kuech TF, Potemski RM. EPITAXIAL-GROWTH AND SELECTIVITY OF ALXGA1-XAS USING NOVEL METALORGANIC PRECURSORS. Journal of the Electrochemical Society. 1991;138:1817-1826.
Goorsky MS, Kuech TF, Cardone F, Mooney PM, Scilla GJ, Potemski RM. CHARACTERIZATION OF EPITAXIAL GAAS AND ALXGA1-XAS LAYERS DOPED WITH OXYGEN. Applied Physics Letters. 1991;58:1979-1981.
Glaser ER, Kennedy TA, Molnar B, Sillmon RS, Spencer MG, Mizuta M, et al.. OPTICALLY DETECTED MAGNETIC-RESONANCE OF GROUP-IV AND GROUP-VI IMPURITIES IN ALAS AND ALXGA1-XAS WITH X-GREATER-THAN-OR-EQUAL-TO-0.35. Physical Review B. 1991;43:14540-14556.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. QUANTUM-CONFINED EXCITONIC STATES AT HIGH-QUALITY INTERFACES IN GAAS(N TYPE)/ALXGA1-XAS(P TYPE) DOUBLE HETEROSTRUCTURES. Physical Review B. 1991;43:14251-14254.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. INTRINSIC, HETEROINTERFACE EXCITONIC STATES IN GAAS(N)/AL0.3GA0.7AS(P) DOUBLE HETEROSTRUCTURES. Journal of Vacuum Science & Technology B. 1991;9:2377-2383.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. LONG-RANGE, MINORITY-CARRIER TRANSPORT IN HIGH-QUALITY SURFACE-FREE GAAS/ALGAAS DOUBLE HETEROSTRUCTURES. Applied Physics Letters. 1991;59:216-218.
Buchan NI, Potemski RM, Kuech TF. VAPOR-PRESSURE AND VAPOR COMPOSITION OF DIETHYLGALLIUM CHLORIDE AND DIETHYLALUMINUM CHLORIDE. Journal of Chemical and Engineering Data. 1991;36:372-374.
Buchan NI, Kuech TF, Tischler MA, Scilla G, Cardone F, Potemski R. EPITAXIAL-GROWTH OF GAAS WITH (C2H5)2GACL AND ASH3 IN A HOTWALL REACTOR. Journal of the Electrochemical Society. 1991;138:2789-2794.
Buchan NI, Kuech TF, Tischler MA, Potemski R. EPITAXIAL-GROWTH OF GAAS WITH (C2H5)2GACL AND ASH3 IN A HOT-WALL SYSTEM. Journal of Crystal Growth. 1991;107:331-336.
Buchan NI, Kuech TF, Scilla G, Cardone F. CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY GROWN GAAS USING CHYX4-Y, TMG AND ASH3. Journal of Crystal Growth. 1991;110:405-414.
Kuech TF. THE USE OF CHLORIDE BASED PRECURSORS IN METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1991;115:52-60.
Lebens JA, Tsai CS, Vahala KJ, Kuech TF. APPLICATION OF SELECTIVE EPITAXY TO FABRICATION OF NANOMETER SCALE WIRE AND DOT STRUCTURES. Applied Physics Letters. 1990;56:2642-2644.
Wang LC, Wang XZ, Lau SS, Sands T, Chan WK, Kuech TF. STABLE AND SHALLOW PDLN OHMIC CONTACTS TO N-GAAS. Applied Physics Letters. 1990;56:2129-2131.
Palevski A, Solomon PM, Kuech TF, Tischler M, Umbach C. SELECTIVELY REGROWN CONTACTS TO FIELD-EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON-GAS CHANNELS. IEEE Electron Device Letters. 1990;11:535-537.
Palevski A, Solomon P, Kuech TF, Tischler MA. REGROWN OHMIC CONTACTS TO THIN GAAS-LAYERS AND 2-DIMENSIONAL ELECTRON-GAS. Applied Physics Letters. 1990;56:171-173.
Kuech TF, Tischler MA, Buchan NI, Potemski R. SELECTIVE EPITAXY OF MOVPE GAAS USING DIETHYL GALLIUM CHLORIDE. Journal of Crystal Growth. 1990;99:324-328.
Kuech TF, Segmuller A, Kuan TS, Goorsky MS. GROWTH AND PROPERTIES OF THIN GAAS EPITAXIAL LAYERS ON AL2O3. Journal of Applied Physics. 1990;67:6497-6506.
Kuech TF, Collins RT, Smith DL, Mailhiot C. FIELD-EFFECT TRANSISTOR STRUCTURE BASED ON STRAIN-INDUCED POLARIZATION CHARGES. Journal of Applied Physics. 1990;67:2650-2652.
Kaufmann U, Wilkening W, Mooney PM, Kuech TF. STRAIN SPLITTING OF THE X-CONDUCTION-BAND VALLEYS AND QUENCHING OF SPIN-VALLEY INTERACTION IN INDIRECT GAAS/ALXGA1-XAS-SI HETEROSTRUCTURES. Physical Review B. 1990;41:10206-10209.
Han CC, Wang XZ, Wang LC, Marshall ED, Lau SS, Schwarz SA, et al.. NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 1990;68:5714-5718.
Buchan NI, Kuech TF, Scilla G, Cardone F, Potemski R. CARBON INCORPORATION IN METAL-ORGANIC VAPOR-PHASE EPITAXY GROWN GAAS FROM CHXI4-X, HI, AND I2. Journal of Electronic Materials. 1990;19:277-281.
Kuech TF. THIN-LAYER FORMATION - PREFACE. Ibm Journal of Research and Development. 1990;34:794-794.
Yu ML, Memmert U, Kuech TF. REACTION OF TRIMETHYLGALLIUM IN THE ATOMIC LAYER EPITAXY OF GAAS(100). Applied Physics Letters. 1989;55:1011-1013.
Yu LS, Wang LC, Marshall ED, Lau SS, Kuech TF. THE TEMPERATURE-DEPENDENCE OF CONTACT RESISTIVITY OF THE GE PD AND THE SI PD NONALLOYED CONTACT SCHEME ON N-GAAS. Journal of Applied Physics. 1989;65:1621-1625.
Venkatasubramanian R, Ghandhi SK, Kuech TF. COMPENSATION MECHANISMS IN N+-GAAS DOPED WITH SULFUR. Journal of Crystal Growth. 1989;97:827-832.
Tischler MA, Kuech TF, Palevski A, Solomon P. ELECTRICAL CHARACTERISTICS OF REGROWN INTERFACES USING DIETHYLGALLIUM CHLORIDE-BASED METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1989;55:2214-2216.
Tischler MA, Baratte H, Kuech TF, Wang PJ. ELECTRICAL CHARACTERIZATION OF GAAS/AL0.30GA0.70ASP+-N HETEROJUNCTIONS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Applied Physics. 1989;65:4928-4935.
Mooney PM, Wilkening W, Kaufmann U, Kuech TF. ELECTRON-PARAMAGNETIC-RESONANCE MEASUREMENTS OF SI-DONOR-RELATED LEVELS IN ALXGA1-XAS. Physical Review B. 1989;39:5554-5557.
Masselink WT, Kuech TF. VELOCITY-FIELD CHARACTERISTICS OF ELECTRONS IN DOPED GAAS. Journal of Electronic Materials. 1989;18:579-584.
Marshall ED, Yu LS, Lau SS, Kuech TF, Kavanagh KL. PLANAR GE PD AND ALLOYED AU-GE-NI OHMIC CONTACTS TO N-ALXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.3). Applied Physics Letters. 1989;54:721-723.
Kuech TF, Tischler MA, Potemski R, Cardone F, Scilla G. DOPING AND DOPANT BEHAVIOR IN (AL,GA)AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1989;98:174-187.
Kuech TF, Tischler MA, Potemski R. SELECTIVE EPITAXY IN THE CONVENTIONAL METALORGANIC VAPOR-PHASE EPITAXY OF GAAS. Applied Physics Letters. 1989;54:910-912.
Moffat HK, Kuech TF, Jensen KF, Wang PJ. Gas-Phase and Surface-Reactions in Si Doping of Gaas by Silanes. Journal of Crystal Growth. 1988;93:594-601.
Steiner TW, Wolford DJ, Kuech TF, Jaros M. AUGER DECAY OF X-POINT EXCITONS IN A TYPE-II GAAS/ALGAAS SUPERLATTICE. Superlattices and Microstructures. 1988;4:227-232.
Scilla GJ, Kuech TF, Cardone F. IMPROVED DETECTION OF CARBON IN GAAS BY SECONDARY ION MASS-SPECTROSCOPY - THE INFLUENCE OF HYDROCARBONS IN METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1988;52:1704-1706.
Pan SH, Shen H, Hang Z, Pollak FH, Kuech TF, Lee JC, et al.. PHOTOREFLECTANCE, RAMAN-SCATTERING, PHOTOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY OF MOCVD GAAS/GAALAS MULTIPLE QUANTUM WELLS. Superlattices and Microstructures. 1988;4:609-617.
Kuech TF, Wang PJ, Tischler MA, Potemski R, Scilla GJ, Cardone F. THE CONTROL AND MODELING OF DOPING PROFILES AND TRANSIENTS IN MOVPE GROWTH. Journal of Crystal Growth. 1988;93:624-630.
Kuech TF, Tischler MA, Wang PJ, Scilla G, Potemski R, Cardone F. CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1988;53:1317-1319.
Kuech TF, Scilla GJ, Cardone F. THE INFLUENCE OF HYDROCARBONS IN MOVPE GAAS GROWTH - IMPROVED DETECTION OF CARBON BY SECONDARY ION MASS-SPECTROSCOPY. Journal of Crystal Growth. 1988;93:550-556.
Kern DP, Kuech TF, Oprysko MM, Wagner A, Eastman DE. FUTURE BEAM-CONTROLLED PROCESSING TECHNOLOGIES FOR MICROELECTRONICS. Science. 1988;241:936-944.
Kash JA, Hvam JM, Tsang JC, Kuech TF. LOCALIZATION AND WAVE-VECTOR CONSERVATION FOR OPTICAL PHONONS IN ALXGA1-XAS AND THIN-LAYERS OF GAAS. Physical Review B. 1988;38:5776-5779.
Wolford DJ, Kuech TF, Steiner TW, Bradley JA, Gell MA, Ninno D, et al.. ELECTRONIC-STRUCTURE OF QUANTUM-WELL STATES REVEALED UNDER HIGH-PRESSURES. Superlattices and Microstructures. 1988;4:525-535.
Wang PJ, Kuech TF, Tischler MA, Mooney PM, Scilla GJ, Cardone F. DEEP LEVELS AND MINORITY-CARRIER LIFETIME IN MOVPE P-TYPE GAAS. Journal of Crystal Growth. 1988;93:569-575.
Wang PJ, Kuech TF, Tischler MA, Mooney P, Scilla G, Cardone F. DEEP LEVELS IN PARA-TYPE GAAS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY. Journal of Applied Physics. 1988;64:4975-4986.
Tischler MA, Baratte H, Kuech TF, Wang PJ. THE INFLUENCE OF GROWTH-CONDITIONS ON THE ELECTRICAL-PROPERTIES OF GAAS/AL0.30GA0.70ASP+/N HETEROJUNCTIONS. Journal of Crystal Growth. 1988;93:631-636.
Yan D, Farrell JP, Lesser PMS, Pollak FH, Kuech TF, Wolford DJ. MEASUREMENT OF ABSOLUTE AL CONCENTRATION IN ALXGA1-XAS. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 1987;24-5:662-666.
Marshall ED, Zhang B, Wang LC, Jiao PF, Chen WX, Sawada T, et al.. NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE. Journal of Applied Physics. 1987;62:942-947.
Lee JC, Schlesinger TE, Kuech TF. INTERDIFFUSION OF AL AND GA IN (AL,GA)AS/GAAS SUPERLATTICES. Journal of Vacuum Science & Technology B. 1987;5:1187-1190.
Kuech TF, Wolford DJ, Veuhoff E, Deline V, Mooney PM, Potemski R, et al.. PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS. Journal of Applied Physics. 1987;62:632-643.
Kuech TF, Wolford DJ, Potemski R, Bradley JA, Kelleher KH, Yan D, et al.. DEPENDENCE OF THE ALXGA1-XAS BAND EDGE ON ALLOY COMPOSITION BASED ON THE ABSOLUTE MEASUREMENT OF X. Applied Physics Letters. 1987;51:505-507.
Wolford DJ, Kuech TF, Bradley JA, Gell MA, Ninno D, Jaros M. PRESSURE-DEPENDENCE OF GAAS/ALXGA1-XAS QUANTUM-WELL BOUND-STATES - THE DETERMINATION OF VALENCE-BAND OFFSETS. Journal of Vacuum Science & Technology B. 1986;4:1043-1050.
Kuech TF, Veuhoff E, Kuan TS, Deline V, Potemski R. THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES. Journal of Crystal Growth. 1986;77:257-271.
Kuech TF, Marshall E, Scilla GJ, Potemski R, Ransom CM, Hung MY. THE EFFECT OF SURFACE PREPARATION ON THE PRODUCTION OF LOW INTERFACIAL CHARGE REGROWN INTERFACES. Journal of Crystal Growth. 1986;77:539-545.
Knoedler CM, Kuech TF. SELECTIVE GAAS/ALXGA1-X AS REACTIVE ION ETCHING USING CCL2F2. Journal of Vacuum Science & Technology B. 1986;4:1233-1236.
Veuhoff E, Kuech TF, Meyerson BS. A STUDY OF SILICON INCORPORATION IN GAAS MOCVD LAYERS. Journal of the Electrochemical Society. 1985;132:1958-1961.
Marshall ED, Chen WX, Wu CS, Lau SS, Kuech TF. NON-ALLOYED OHMIC CONTACT TO NORMAL-GAAS BY SOLID-PHASE EPITAXY. Applied Physics Letters. 1985;47:298-300.
Lau SS, Chen WX, Marshall ED, Pai CS, Tseng WF, Kuech TF. THERMAL AND CHEMICAL-STABILITY OF SCHOTTKY METALLIZATION ON GAAS. Applied Physics Letters. 1985;47:1298-1300.
Kuech TF, Potemski R, Chappell TI. CHARACTERIZATION OF SILICON IMPLANTED GAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION. Journal of Applied Physics. 1985;58:1196-1203.
Kuech TF, Potemski R. REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES. Applied Physics Letters. 1985;47:821-823.
Kuan TS, Kuech TF, Wang WI, Wilkie EL. LONG-RANGE ORDER IN ALXGA1-XAS. Physical Review Letters. 1985;54:201-204.
Kuech TF, Veuhoff E, Meyerson BS. SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION. Journal of Crystal Growth. 1984;68:48-53.
Kuech TF, Veuhoff E. MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS. Journal of Crystal Growth. 1984;68:148-156.
Kuech TF, Meyerson BS, Veuhoff E. DISILANE - A NEW SILICON DOPING SOURCE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS. Applied Physics Letters. 1984;44:986-988.
Wu CS, Lau SS, Kuech TF, Liu BX. SURFACE-MORPHOLOGY AND ELECTRONIC-PROPERTIES OF ERSI2. Thin Solid Films. 1983;104:175-182.
Maenpaa M, Kuech TF, Nicolet MA, Lau SS, Sadana DK. The Heteroepitaxy of Ge on Si a Comparison of Chemical Vapor and Vacuum-Deposited Layers. Journal of Applied Physics. 1982;53:1076-1083.
Lau SS, Pai CS, Wu CS, Kuech TF, Liu BX. SURFACE-MORPHOLOGY OF ERBIUM SILICIDE. Applied Physics Letters. 1982;41:77-80.
Kuech TF, McCaldin JO. BEHAVIOR OF SUBSTRATE-CONFINED LIQUIDS FOR INSITU CRYSTALLIZATION OF SEMICONDUCTORS. Thin Solid Films. 1982;97:9-16.
Kuech TF, McCaldin JO. HGTE/CDTE HETEROJUNCTIONS - A LATTICE-MATCHED SCHOTTKY-BARRIER STRUCTURE. Journal of Applied Physics. 1982;53:3121-3128.
Collins RT, Kuech TF, McGill TC. A DLTS STUDY OF DEEP LEVELS IN NORMAL-TYPE CDTE. Journal of Vacuum Science & Technology. 1982;21:191-194.
Kuech TF. The Use of Au-Cd Alloys to Achieve Large Schottky-Barrier Heights on Cdte. Journal of Applied Physics. 1981;52:4874-4876.
McCaldin JO, Kuech TF. STABILITY AND PINNING POINTS IN SUBSTRATE-CONFINED LIQUIDS. Journal of Applied Physics. 1981;52:803-807.
Kuech TF, McCaldin JO. LOW-TEMPERATURE CVD GROWTH OF EPITAXIAL HGTE ON CDTE. Journal of the Electrochemical Society. 1981;128:1142-1144.
Kuech TF, Maenpaa M, Lau SS. EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE. Applied Physics Letters. 1981;39:245-247.
Kuech TF, McGaldin JO. COMPOSITIONAL DEPENDENCE OF SCHOTTKY-BARRIER HEIGHTS FOR AU ON CHEMICALLY ETCHED INXGA1-XP SURFACES. Journal of Vacuum Science & Technology. 1980;17:891-893.
Kuech TF, McCaldin JO. CONFINING SUBSTRATE FOR MICRON-THICK LIQUID-FILMS. Applied Physics Letters. 1980;37:44-46.
Dirstine RT, Blumenthal RN, Kuech TF. IONIC-CONDUCTIVITY OF CALCIA, YTTRIA, AND RARE EARTH DOPED CERIUM DIOXIDE. Journal of the Electrochemical Society. 1979;126:264-269.