All Faculty and Research Staff Publications

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Huang JW, Gaines DF, Kuech TF, Potemski RM, Cardone F. ALKOXIDE PRECURSORS FOR CONTROLLED OXYGEN INCORPORATION DURING METALORGANIC VAPOR-PHASE EPITAXY GAAS AND ALXGA1-XAS GROWTH. Journal of Electronic Materials. 1994 ;23:659-667.
Huang JW, Ryan JM, Bray KL, Kuech TF. CONTROLLED OXYGEN INCORPORATION IN INDIUM GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Electronic Materials. 1995 ;24:1539-1546.
Huang JW, Kuech TF, Anderson TJ. OXYGEN-BASED DEEP LEVELS IN METALORGANIC VAPOR-PHASE EPITAXY INDIUM GALLIUM-ARSENIDE. Applied Physics Letters. 1995 ;67:1116-1118.
Huang JW, Kuech TF. MULTIPLE DEEP LEVELS IN METALORGANIC VAPORPHASE EPITAXY GAAS GROWN BY CONTROLLED OXYGEN INCORPORATION. Applied Physics Letters. 1994 ;65:604-606.
Huang JW, Kuech TF. ELECTRICAL CHARACTERIZATION OF SEMIINSULATING METALORGANIC VAPOR-PHASE EPITAXY GAAS GROWN BY CONTROLLED OXYGEN INCORPORATION. Journal of Crystal Growth. 1994 ;145:462-467.
Huang JW, Kuech TF, Lu HQ, Bhat I. Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 1996 ;68:2392-2394.
Huang JW, Bray KL, Kuech TF. Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs. Journal of Applied Physics. 1996 ;80:6819-6826.