All Faculty and Research Staff Publications

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1989
Venkatasubramanian R, Ghandhi SK, Kuech TF. COMPENSATION MECHANISMS IN N+-GAAS DOPED WITH SULFUR. Journal of Crystal Growth. 1989 ;97:827-832.
Kuech TF, Tischler MA, Potemski R, Cardone F, Scilla G. DOPING AND DOPANT BEHAVIOR IN (AL,GA)AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1989 ;98:174-187.
Tischler MA, Kuech TF, Palevski A, Solomon P. ELECTRICAL CHARACTERISTICS OF REGROWN INTERFACES USING DIETHYLGALLIUM CHLORIDE-BASED METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1989 ;55:2214-2216.
Tischler MA, Baratte H, Kuech TF, Wang PJ. ELECTRICAL CHARACTERIZATION OF GAAS/AL0.30GA0.70ASP+-N HETEROJUNCTIONS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Applied Physics. 1989 ;65:4928-4935.
Mooney PM, Wilkening W, Kaufmann U, Kuech TF. ELECTRON-PARAMAGNETIC-RESONANCE MEASUREMENTS OF SI-DONOR-RELATED LEVELS IN ALXGA1-XAS. Physical Review B. 1989 ;39:5554-5557.
Marshall ED, Yu LS, Lau SS, Kuech TF, Kavanagh KL. PLANAR GE PD AND ALLOYED AU-GE-NI OHMIC CONTACTS TO N-ALXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.3). Applied Physics Letters. 1989 ;54:721-723.
Yu ML, Memmert U, Kuech TF. REACTION OF TRIMETHYLGALLIUM IN THE ATOMIC LAYER EPITAXY OF GAAS(100). Applied Physics Letters. 1989 ;55:1011-1013.
Kuech TF, Tischler MA, Potemski R. SELECTIVE EPITAXY IN THE CONVENTIONAL METALORGANIC VAPOR-PHASE EPITAXY OF GAAS. Applied Physics Letters. 1989 ;54:910-912.
Yu LS, Wang LC, Marshall ED, Lau SS, Kuech TF. THE TEMPERATURE-DEPENDENCE OF CONTACT RESISTIVITY OF THE GE PD AND THE SI PD NONALLOYED CONTACT SCHEME ON N-GAAS. Journal of Applied Physics. 1989 ;65:1621-1625.
Masselink WT, Kuech TF. VELOCITY-FIELD CHARACTERISTICS OF ELECTRONS IN DOPED GAAS. Journal of Electronic Materials. 1989 ;18:579-584.
1988
Steiner TW, Wolford DJ, Kuech TF, Jaros M. AUGER DECAY OF X-POINT EXCITONS IN A TYPE-II GAAS/ALGAAS SUPERLATTICE. Superlattices and Microstructures. 1988 ;4:227-232.
Kuech TF, Wang PJ, Tischler MA, Potemski R, Scilla GJ, Cardone F. THE CONTROL AND MODELING OF DOPING PROFILES AND TRANSIENTS IN MOVPE GROWTH. Journal of Crystal Growth. 1988 ;93:624-630.
Kuech TF, Tischler MA, Wang PJ, Scilla G, Potemski R, Cardone F. CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1988 ;53:1317-1319.
Wang PJ, Kuech TF, Tischler MA, Mooney PM, Scilla GJ, Cardone F. DEEP LEVELS AND MINORITY-CARRIER LIFETIME IN MOVPE P-TYPE GAAS. Journal of Crystal Growth. 1988 ;93:569-575.
Wang PJ, Kuech TF, Tischler MA, Mooney P, Scilla G, Cardone F. DEEP LEVELS IN PARA-TYPE GAAS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY. Journal of Applied Physics. 1988 ;64:4975-4986.
Wolford DJ, Kuech TF, Steiner TW, Bradley JA, Gell MA, Ninno D, Jaros M. ELECTRONIC-STRUCTURE OF QUANTUM-WELL STATES REVEALED UNDER HIGH-PRESSURES. Superlattices and Microstructures. 1988 ;4:525-535.
Kern DP, Kuech TF, Oprysko MM, Wagner A, Eastman DE. FUTURE BEAM-CONTROLLED PROCESSING TECHNOLOGIES FOR MICROELECTRONICS. Science. 1988 ;241:936-944.
Moffat HK, Kuech TF, Jensen KF, Wang PJ. Gas-Phase and Surface-Reactions in Si Doping of Gaas by Silanes. Journal of Crystal Growth. 1988 ;93:594-601.
Scilla GJ, Kuech TF, Cardone F. IMPROVED DETECTION OF CARBON IN GAAS BY SECONDARY ION MASS-SPECTROSCOPY - THE INFLUENCE OF HYDROCARBONS IN METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1988 ;52:1704-1706.
Tischler MA, Baratte H, Kuech TF, Wang PJ. THE INFLUENCE OF GROWTH-CONDITIONS ON THE ELECTRICAL-PROPERTIES OF GAAS/AL0.30GA0.70ASP+/N HETEROJUNCTIONS. Journal of Crystal Growth. 1988 ;93:631-636.
Kuech TF, Scilla GJ, Cardone F. THE INFLUENCE OF HYDROCARBONS IN MOVPE GAAS GROWTH - IMPROVED DETECTION OF CARBON BY SECONDARY ION MASS-SPECTROSCOPY. Journal of Crystal Growth. 1988 ;93:550-556.
Kash JA, Hvam JM, Tsang JC, Kuech TF. LOCALIZATION AND WAVE-VECTOR CONSERVATION FOR OPTICAL PHONONS IN ALXGA1-XAS AND THIN-LAYERS OF GAAS. Physical Review B. 1988 ;38:5776-5779.
Pan SH, Shen H, Hang Z, Pollak FH, Kuech TF, Lee JC, Schlesinger TE, Shahid MA. PHOTOREFLECTANCE, RAMAN-SCATTERING, PHOTOLUMINESCENCE AND TRANSMISSION ELECTRON-MICROSCOPY OF MOCVD GAAS/GAALAS MULTIPLE QUANTUM WELLS. Superlattices and Microstructures. 1988 ;4:609-617.

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