All Faculty and Research Staff Publications

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1992
Wolford DJ, Gilliland GD, Kuech TF, Martinsen J, Bradley JA, Tsang CF, Venkatasubramanian R, Ghandhi SK, Hjalmarson HP, Klem J. INTERFACE-FREE GAAS STRUCTURES - FROM BULK TO THE QUANTUM LIMIT. Institute of Physics Conference Series. 1992 :401-406.
Cargill GS, Segmuller A, Kuech TF, Theis TN. LATTICE STRAIN FROM DX CENTERS AND PERSISTENT PHOTOCARRIERS IN SN-DOPED AND SI-DOPED GA1-XALXAS. Physical Review B. 1992 ;46:10078-10085.
Wolford DJ, Gilliland GD, Kuech TF, Bradley JA, Hjalmarson HP. OPTICALLY DETERMINED LOW-TEMPERATURE, HIGH-MOBILITY TRANSPORT IN INTERFACE-FREE GAAS HETEROSTRUCTURES. Institute of Physics Conference Series. 1992 :271-274.
Kuech TF. PERSPECTIVES ON METAL ORGANIC VAPOR-PHASE EPITAXY GROWTH - CHEMISTRY, STRUCTURES AND SYSTEMS. Thin Solid Films. 1992 ;216:77-83.
Kuech TF, Potemski R, Cardone F, Scilla G. QUANTITATIVE OXYGEN MEASUREMENTS IN OMVPE ALXGA1-XAS GROWN BY METHYL PRECURSORS. Journal of Electronic Materials. 1992 ;21:341-346.
Kuech TF. RECENT ADVANCES IN METAL-ORGANIC VAPOR-PHASE EPITAXY. Proceedings of the Ieee. 1992 ;80:1609-1624.
Masi M, Simka H, Jensen KF, Kuech TF, Potemski R. SIMULATION OF CARBON DOPING OF GAAS DURING MOVPE. Journal of Crystal Growth. 1992 ;124:483-492.
Phang YH, Savage DE, Kuech TF, Lagally MG, Park JS, Wang KL. X-RAY-DIFFRACTION DETERMINATION OF INTERFACIAL ROUGHNESS CORRELATION IN SIXGE1-X/SI AND GAAS/ALXGA1-XAS SUPERLATTICES. Applied Physics Letters. 1992 ;60:2986-2988.
1991
Tischler MA, Potemski RM, Kuech TF, Cardone F, Goorsky MS, Scilla G. ACCEPTOR DOPING OF (AL,GA)AS USING CARBON BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1991 ;107:268-273.
Buchan NI, Kuech TF, Scilla G, Cardone F. CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY GROWN GAAS USING CHYX4-Y, TMG AND ASH3. Journal of Crystal Growth. 1991 ;110:405-414.
Goorsky MS, Kuech TF, Cardone F, Mooney PM, Scilla GJ, Potemski RM. CHARACTERIZATION OF EPITAXIAL GAAS AND ALXGA1-XAS LAYERS DOPED WITH OXYGEN. Applied Physics Letters. 1991 ;58:1979-1981.
Goorsky MS, Kuech TF, Tischler MA, Potemski RM. DETERMINATION OF EPITAXIAL ALXGA1-XAS COMPOSITION FROM X-RAY-DIFFRACTION MEASUREMENTS. Applied Physics Letters. 1991 ;59:2269-2271.
Goorsky MS, Kuech TF, Potemski RM. EPITAXIAL-GROWTH AND SELECTIVITY OF ALXGA1-XAS USING NOVEL METALORGANIC PRECURSORS. Journal of the Electrochemical Society. 1991 ;138:1817-1826.
Buchan NI, Kuech TF, Tischler MA, Scilla G, Cardone F, Potemski R. EPITAXIAL-GROWTH OF GAAS WITH (C2H5)2GACL AND ASH3 IN A HOTWALL REACTOR. Journal of the Electrochemical Society. 1991 ;138:2789-2794.
Buchan NI, Kuech TF, Tischler MA, Potemski R. EPITAXIAL-GROWTH OF GAAS WITH (C2H5)2GACL AND ASH3 IN A HOT-WALL SYSTEM. Journal of Crystal Growth. 1991 ;107:331-336.
Annapragada AV, Jensen KF, Kuech TF. INFRARED SPECTROSCOPIC DETERMINATION OF SUBSTITUTIONAL CARBON IN MOVPE GROWN FILMS OF GAAS. Journal of Crystal Growth. 1991 ;107:248-253.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. INTRINSIC, HETEROINTERFACE EXCITONIC STATES IN GAAS(N)/AL0.3GA0.7AS(P) DOUBLE HETEROSTRUCTURES. Journal of Vacuum Science & Technology B. 1991 ;9:2377-2383.
Wolford DJ, Gilliland GD, Kuech TF, Smith LM, Martinsen J, Bradley JA, Tsang CF, Venkatasubramanian R, Ghandi SK, Hjalmarson HP. INTRINSIC RECOMBINATION AND INTERFACE CHARACTERIZATION IN SURFACE-FREE GAAS STRUCTURES. Journal of Vacuum Science & Technology B. 1991 ;9:2369-2376.
Wang LC, Wang XZ, Hsu SN, Lau SS, Lin PSD, Sands T, Schwarz SA, Plumton DL, Kuech TF. AN INVESTIGATION OF THE PD-IN-GE NONSPIKING OHMIC CONTACT TO N-GAAS USING TRANSMISSION-LINE MEASUREMENT, KELVIN, AND COX AND STRACK STRUCTURES. Journal of Applied Physics. 1991 ;69:4364-4372.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. LONG-RANGE, MINORITY-CARRIER TRANSPORT IN HIGH-QUALITY SURFACE-FREE GAAS/ALGAAS DOUBLE HETEROSTRUCTURES. Applied Physics Letters. 1991 ;59:216-218.
Glaser ER, Kennedy TA, Molnar B, Sillmon RS, Spencer MG, Mizuta M, Kuech TF. OPTICALLY DETECTED MAGNETIC-RESONANCE OF GROUP-IV AND GROUP-VI IMPURITIES IN ALAS AND ALXGA1-XAS WITH X-GREATER-THAN-OR-EQUAL-TO-0.35. Physical Review B. 1991 ;43:14540-14556.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. QUANTUM-CONFINED EXCITONIC STATES AT HIGH-QUALITY INTERFACES IN GAAS(N TYPE)/ALXGA1-XAS(P TYPE) DOUBLE HETEROSTRUCTURES. Physical Review B. 1991 ;43:14251-14254.
Kuech TF, Goorsky MS, Tischler MA, Palevski A, Solomon P, Potemski R, Tsai CS, Lebens JA, Vahala KJ. SELECTIVE EPITAXY OF GAAS, ALXGA1-XAS, AND INXGA1-XAS. Journal of Crystal Growth. 1991 ;107:116-128.
Lu CR, Anderson JR, Stone DR, Beard WT, Wilson RA, Kuech TF, Wright SL. TEMPERATURE AND DOPING-CONCENTRATION DEPENDENCE OF THE OSCILLATORY PROPERTIES OF THE PHOTOREFLECTANCE SPECTRA FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY. Physical Review B. 1991 ;43:11791-11797.
Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. THE TEMPERATURE-DEPENDENCE OF THE CONTACT RESISTIVITY OF THE SI/NI(MG) NONSPIKING CONTACT SCHEME ON P-GAAS. Journal of Applied Physics. 1991 ;69:3124-3129.
Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. THERMALLY STABLE AND NONSPIKING PD/SB(MN) OHMIC CONTACT TO P-GAAS. Applied Physics Letters. 1991 ;58:1617-1619.
Buchan NI, Kuech TF, Beach D, Scilla G, Cardone F. THE USE OF AZO-COMPOUNDS AS PROBES OF CARBON INCORPORATION OF NOMINALLY UNDOPED METALORGANIC VAPOR-PHASE EPITAXY GROWN GAAS. Journal of Applied Physics. 1991 ;69:2156-2160.
Kuech TF. THE USE OF CHLORIDE BASED PRECURSORS IN METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1991 ;115:52-60.
Buchan NI, Potemski RM, Kuech TF. VAPOR-PRESSURE AND VAPOR COMPOSITION OF DIETHYLGALLIUM CHLORIDE AND DIETHYLALUMINUM CHLORIDE. Journal of Chemical and Engineering Data. 1991 ;36:372-374.
1990
Lebens JA, Tsai CS, Vahala KJ, Kuech TF. APPLICATION OF SELECTIVE EPITAXY TO FABRICATION OF NANOMETER SCALE WIRE AND DOT STRUCTURES. Applied Physics Letters. 1990 ;56:2642-2644.
Buchan NI, Kuech TF, Scilla G, Cardone F, Potemski R. CARBON INCORPORATION IN METAL-ORGANIC VAPOR-PHASE EPITAXY GROWN GAAS FROM CHXI4-X, HI, AND I2. Journal of Electronic Materials. 1990 ;19:277-281.
Kuech TF, Collins RT, Smith DL, Mailhiot C. FIELD-EFFECT TRANSISTOR STRUCTURE BASED ON STRAIN-INDUCED POLARIZATION CHARGES. Journal of Applied Physics. 1990 ;67:2650-2652.
Kuech TF, Segmuller A, Kuan TS, Goorsky MS. GROWTH AND PROPERTIES OF THIN GAAS EPITAXIAL LAYERS ON AL2O3. Journal of Applied Physics. 1990 ;67:6497-6506.
Han CC, Wang XZ, Wang LC, Marshall ED, Lau SS, Schwarz SA, Palmstrom CJ, Harbison JP, Florez LT, Potemski RM, et al. NONSPIKING OHMIC CONTACT TO P-GAAS BY SOLID-PHASE REGROWTH. Journal of Applied Physics. 1990 ;68:5714-5718.
Palevski A, Solomon P, Kuech TF, Tischler MA. REGROWN OHMIC CONTACTS TO THIN GAAS-LAYERS AND 2-DIMENSIONAL ELECTRON-GAS. Applied Physics Letters. 1990 ;56:171-173.
Kuech TF, Tischler MA, Buchan NI, Potemski R. SELECTIVE EPITAXY OF MOVPE GAAS USING DIETHYL GALLIUM CHLORIDE. Journal of Crystal Growth. 1990 ;99:324-328.
Palevski A, Solomon PM, Kuech TF, Tischler M, Umbach C. SELECTIVELY REGROWN CONTACTS TO FIELD-EFFECT TRANSISTORS WITH 2-DIMENSIONAL ELECTRON-GAS CHANNELS. IEEE Electron Device Letters. 1990 ;11:535-537.
Wang LC, Wang XZ, Lau SS, Sands T, Chan WK, Kuech TF. STABLE AND SHALLOW PDLN OHMIC CONTACTS TO N-GAAS. Applied Physics Letters. 1990 ;56:2129-2131.
Kaufmann U, Wilkening W, Mooney PM, Kuech TF. STRAIN SPLITTING OF THE X-CONDUCTION-BAND VALLEYS AND QUENCHING OF SPIN-VALLEY INTERACTION IN INDIRECT GAAS/ALXGA1-XAS-SI HETEROSTRUCTURES. Physical Review B. 1990 ;41:10206-10209.
Kuech TF. THIN-LAYER FORMATION - PREFACE. Ibm Journal of Research and Development. 1990 ;34:794-794.
1989
Venkatasubramanian R, Ghandhi SK, Kuech TF. COMPENSATION MECHANISMS IN N+-GAAS DOPED WITH SULFUR. Journal of Crystal Growth. 1989 ;97:827-832.
Kuech TF, Tischler MA, Potemski R, Cardone F, Scilla G. DOPING AND DOPANT BEHAVIOR IN (AL,GA)AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1989 ;98:174-187.
Tischler MA, Kuech TF, Palevski A, Solomon P. ELECTRICAL CHARACTERISTICS OF REGROWN INTERFACES USING DIETHYLGALLIUM CHLORIDE-BASED METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1989 ;55:2214-2216.
Tischler MA, Baratte H, Kuech TF, Wang PJ. ELECTRICAL CHARACTERIZATION OF GAAS/AL0.30GA0.70ASP+-N HETEROJUNCTIONS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Applied Physics. 1989 ;65:4928-4935.
Mooney PM, Wilkening W, Kaufmann U, Kuech TF. ELECTRON-PARAMAGNETIC-RESONANCE MEASUREMENTS OF SI-DONOR-RELATED LEVELS IN ALXGA1-XAS. Physical Review B. 1989 ;39:5554-5557.
Marshall ED, Yu LS, Lau SS, Kuech TF, Kavanagh KL. PLANAR GE PD AND ALLOYED AU-GE-NI OHMIC CONTACTS TO N-ALXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.3). Applied Physics Letters. 1989 ;54:721-723.
Yu ML, Memmert U, Kuech TF. REACTION OF TRIMETHYLGALLIUM IN THE ATOMIC LAYER EPITAXY OF GAAS(100). Applied Physics Letters. 1989 ;55:1011-1013.
Kuech TF, Tischler MA, Potemski R. SELECTIVE EPITAXY IN THE CONVENTIONAL METALORGANIC VAPOR-PHASE EPITAXY OF GAAS. Applied Physics Letters. 1989 ;54:910-912.
Yu LS, Wang LC, Marshall ED, Lau SS, Kuech TF. THE TEMPERATURE-DEPENDENCE OF CONTACT RESISTIVITY OF THE GE PD AND THE SI PD NONALLOYED CONTACT SCHEME ON N-GAAS. Journal of Applied Physics. 1989 ;65:1621-1625.
Masselink WT, Kuech TF. VELOCITY-FIELD CHARACTERISTICS OF ELECTRONS IN DOPED GAAS. Journal of Electronic Materials. 1989 ;18:579-584.

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