All Faculty and Research Staff Publications

Export 407 results:
Filters: Author is T. F. Kuech  [Clear All Filters]
1997
Booker GR, Daly M, Klipstein PC, Lakrimi M, Kuech TF, Li J, Lyapin SG, Mason NJ, Murgatroyd IJ, Portal JC, et al. Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor. Journal of Crystal Growth. 1997 ;170:777-782.
Thon A, Saulys D, Safvi SA, Gaines DF, Kuech TF. A mass spectroscopic study of the vapor phase thermal decomposition of trimethylamine. Journal of the Electrochemical Society. 1997 ;144:1127-1130.
Brainard RJ, Paulson CA, Saulys D, Gaines DF, Kuech TF, Ellis AB. Modulation of cadmium selenide photoluminescence intensity by adsorption of silapentanes and chlorinated silanes. Journal of Physical Chemistry B. 1997 ;101:11180-11184.
Ellis AB, Brainard RJ, Kepler KD, Moore DE, Winder EJ, Kuech TF, Lisensky GC. Modulation of the photoluminescence of semiconductors by surface adduct formation: An application of inorganic photochemistry to chemical sensing. Journal of Chemical Education. 1997 ;74:680-684.
Ingerly DB, Chang YA, Perkins NR, Kuech TF. Ohmic contacts to n-GaN using PtIn2. Applied Physics Letters. 1997 ;70:108-110.
Cederberg JG, Bray KL, Kuech TF. Oxygen-related defects in low phosphorous content GaAs1-yPy grown by metal organic vapor phase epitaxy. Journal of Applied Physics. 1997 ;82:2263-2269.
Culp TD, Hommerich U, Redwing JM, Kuech TF, Bray KL. Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure. Journal of Applied Physics. 1997 ;82:368-374.
Geisz JF, Safvi SA, Kuech TF. Photoreflectance study of the long-term stability of various surface chemical treatments on (001) n-GaAs. Journal of the Electrochemical Society. 1997 ;144:732-736.
Safvi SA, Liu J, Kuech TF. Spatial resolution of localized photoluminescence by near-field scanning optical microscopy. Journal of Applied Physics. 1997 ;82:5352-5359.
Edwards NV, Yoo SD, Bremser MD, Zheleva T, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, et al. Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. Materials Science and Engineering B-Solid State Materials for Advanced Technology. 1997 ;50:134-141.
Li J, Kuech TF. Surface morphology of carbon-doped GaAs grown by MOVPE. Journal of Crystal Growth. 1997 ;170:292-296.
Liu QZ, Yu LS, Lau SS, Redwing JM, Perkins NR, Kuech TF. Thermally stable PtSi Schottky contact on n-GaN. Applied Physics Letters. 1997 ;70:1275-1277.
Kang JU, Frankel MY, Huang JW, Kuech TF. Ultrafast carrier trapping in oxygen-doped metal-organic vapor phase epitaxy GaAs. Applied Physics Letters. 1997 ;70:1560-1562.
Edwards NV, Yoo SD, Bremser MD, Weeks TW, Nam OH, Davis RF, Liu H, Stall RA, Horton MN, Perkins NR, et al. Variation of GaN valence bands with biaxial stress and quantification of residual stress. Applied Physics Letters. 1997 ;70:2001-2003.
1996
Botez D, Mawst LJ, Bhattacharya A, Lopez J, Li J, Kuech TF, Iakovlev VP, Suruceanu GI, Caliman A, Syrbu AV. 66% CW wallplug efficiency from Al-free 0.98 mu m-emitting diode lasers. Electronics Letters. 1996 ;32:2012-2013.
Kuech TF, Nayak S, Huang JW, Li J. Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs. Journal of Crystal Growth. 1996 ;163:171-179.
Huang JW, Bray KL, Kuech TF. Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs. Journal of Applied Physics. 1996 ;80:6819-6826.
Huang JW, Kuech TF, Lu HQ, Bhat I. Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy. Applied Physics Letters. 1996 ;68:2392-2394.
Thon A, Kuech TF. High temperature adduct formation of trimethylgallium and ammonia. Applied Physics Letters. 1996 ;69:55-57.
Nayak S, Huang JW, Redwing JM, Savage DE, Lagally MG, Kuech TF. Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001). Applied Physics Letters. 1996 ;68:1270-1272.
Bhattacharya A, Mawst LJ, Nayak S, Li J, Kuech TF. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates. Applied Physics Letters. 1996 ;68:2240-2242.
Kuech TF, Perkins NR. Metalorganic vapor phase epitaxy of II-VI materials for visible light emitters. Journal of Crystal Growth. 1996 ;166:558-565.
Liu JT, Perkins NR, Horton MN, Redwing JM, Tischler MA, Kuech TF. A near-field scanning optical microscopy study of the photoluminescence from GaN films. Applied Physics Letters. 1996 ;69:3519-3521.
Liu JT, Kuech TF. A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation. Applied Physics Letters. 1996 ;69:662-664.
Ma J, Garni B, Perkins N, Obrien WL, Kuech TF, Lagally MG. Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy. Applied Physics Letters. 1996 ;69:3351-3353.
Liu QZ, Lau SS, Perkins NR, Kuech TF. Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions. Applied Physics Letters. 1996 ;69:1722-1724.
Garni B, Ma J, Perkins N, Liu JT, Kuech TF, Lagally MG. Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy. Applied Physics Letters. 1996 ;68:1380-1382.
Deng F, Liu QZ, Yu LS, Guan ZF, Lau SS, Redwing JM, Geisz J, Kuech TF. Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors. Journal of Applied Physics. 1996 ;79:1763-1771.
1995
Geisz JF, Kuech TF, Ellis AB. CHANGING PHOTOLUMINESCENCE INTENSITY FROM GAAS/AL0.3GA0.7AS HETEROSTRUCTURES UPON CHEMISORPTION OF SO2. Journal of Applied Physics. 1995 ;77:1233-1240.
Huang JW, Ryan JM, Bray KL, Kuech TF. CONTROLLED OXYGEN INCORPORATION IN INDIUM GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Electronic Materials. 1995 ;24:1539-1546.
Winder EJ, Moore DE, Neu DR, Ellis AB, Geisz JF, Kuech TF. DETECTION OF AMMONIA, PHOSPHINE, AND ARSINE GASES BY REVERSIBLE MODULATION OF CADMIUM SELENIDE PHOTOLUMINESCENCE INTENSITY. Journal of Crystal Growth. 1995 ;148:63-69.
Nayak S, Savage DE, Chu HN, Lagally MG, Kuech TF. In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD. Journal of Crystal Growth. 1995 ;157:168-171.
Huang JW, Kuech TF, Anderson TJ. OXYGEN-BASED DEEP LEVELS IN METALORGANIC VAPOR-PHASE EPITAXY INDIUM GALLIUM-ARSENIDE. Applied Physics Letters. 1995 ;67:1116-1118.
Lin CF, Chang YA, Pan N, Huang JW, Kuech TF. PDAL SCHOTTKY CONTACT TO IN0.52AL0.48AS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION. Applied Physics Letters. 1995 ;67:3587-3589.
Liu QZ, Deng F, Yu LS, Guan ZF, Pappert SA, Yu PKL, Lau SS, Redwing JM, Kuech TF. PHOTOELASTIC WAVE-GUIDES AND THE CONTROLLED INTRODUCTION OF STRAIN IN III-V SEMICONDUCTORS BY MEANS OF THIN-FILM TECHNOLOGY. Journal of Applied Physics. 1995 ;78:236-244.
Chen CP, Chang YA, Kuech TF. SCHOTTKY-BARRIER ENHANCEMENT USING REACTED NI2AL3NI/N-GAAS, NI/AL/NI/N-GAAS, AND NIAL/AL/NI/N-GAAS CONTACTS. Journal of Applied Physics. 1995 ;77:4777-4782.
Frankel MY, Huang JW, Kuech TF. ULTRAFAST PHOTODETECTOR MATERIALS BASED ON OXYGEN-DOPED METALORGANIC VAPOR-PHASE EPITAXY GAAS. Applied Physics Letters. 1995 ;66:634-636.
1994
Huang JW, Gaines DF, Kuech TF, Potemski RM, Cardone F. ALKOXIDE PRECURSORS FOR CONTROLLED OXYGEN INCORPORATION DURING METALORGANIC VAPOR-PHASE EPITAXY GAAS AND ALXGA1-XAS GROWTH. Journal of Electronic Materials. 1994 ;23:659-667.
Kuech TF, Redwing JM. CARBON DOPING IN METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1994 ;145:382-389.
Wolford DJ, Gilliland GD, Kuech TF, Klem JF, Hjalmarson HP, Bradley JA, Tsang CF, Martinsen J. COMPARISON OF TRANSPORT, RECOMBINATION, AND INTERFACIAL QUALITY IN MOLECULAR-BEAM EPITAXY AND ORGANOMETALLIC VAPOR-PHASE EPITAXY GAAS/ALXGA1-XAS STRUCTURES. Applied Physics Letters. 1994 ;64:1416-1418.
Redwing JM, Nayak S, Savage DE, Lagally MG, Dawsonelli DF, Kuech TF. THE EFFECT OF CONTROLLED IMPURITY INCORPORATION ON INTERFACIAL ROUGHNESS IN GAAS/ALXGA1-XAS SUPERLATTICE STRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1994 ;145:792-798.
Ryan JM, Huang JW, Kuech TF, Bray KL. THE EFFECTS OF TEMPERATURE AND OXYGEN CONCENTRATION ON THE PHOTOLUMINESCENCE OF EPITAXIAL METALORGANIC VAPOR-PHASE EPITAXY GAASO. Journal of Applied Physics. 1994 ;76:1175-1179.
Huang JW, Kuech TF. ELECTRICAL CHARACTERIZATION OF SEMIINSULATING METALORGANIC VAPOR-PHASE EPITAXY GAAS GROWN BY CONTROLLED OXYGEN INCORPORATION. Journal of Crystal Growth. 1994 ;145:462-467.
Chen CP, Chang YA, Kuech TF. ENHANCEMENT OF SCHOTTKY-BARRIER HEIGHT TO N-GAAS USING NIAL, NIAL/AL/NI, AND NI/AL/NI LAYER STRUCTURES. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1994 ;12:1915-1919.
Geisz JF, Kuech TF, Lagally MG, Cardone F, Potemski RM. FILM STRESS OF SPUTTERED W/C MULTILAYERS AND STRAIN RELAXATION UPON ANNEALING. Journal of Applied Physics. 1994 ;75:1530-1533.
Redwing JM, Kuech TF, Gordon DC, Vaartstra BA, Lau SS. GROWTH-STUDIES OF ERBIUM-DOPED GAAS DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY USING NOVEL CYCLOPENTADIENYL-BASED ERBIUM SOURCES. Journal of Applied Physics. 1994 ;76:1585-1591.
Chen CP, Chang YA, Huang JW, Kuech TF. HIGH SCHOTTKY-BARRIER HEIGHT OF THE AL-N-GAAS DIODES ACHIEVED BY SPUTTER-DEPOSITION. Applied Physics Letters. 1994 ;64:1413-1415.
Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. LUMINESCENCE KINETICS OF INTRINSIC EXCITONIC STATES QUANTUM-MECHANICALLY BOUND NEAR HIGH-QUALITY (N--TYPE GAAS)/(P-TYPE ALXGA1-XAS) HETEROINTERFACES. Physical Review B. 1994 ;49:8113-8125.
Huang JW, Kuech TF. MULTIPLE DEEP LEVELS IN METALORGANIC VAPORPHASE EPITAXY GAAS GROWN BY CONTROLLED OXYGEN INCORPORATION. Applied Physics Letters. 1994 ;65:604-606.
Chen CP, Chang YA, Kuech TF. SCHOTTKY ENHANCEMENT OF REACTED NIAL N-GAAS CONTACTS. Applied Physics Letters. 1994 ;64:3485-3487.

Pages