All Faculty and Research Staff Publications

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2000
Yi SS, Hansen DM, Inoki CK, Harris DL, Kuan TS, Kuech TF. Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition. Applied Physics Letters. 2000 ;77:842-844.
Hansen DM, Charters D, Au YL, Mak WK, Tejasukmana W, Moran PD, Kuech TF. Mechanistic study of borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate. Journal of Electronic Materials. 2000 ;29:1312-1318.
Sun JX, Redwing JM, Kuech TF. Model development of GaN MOVPE growth chemistry for reactor design. Journal of Electronic Materials. 2000 ;29:2-9.
Gu SL, Zhang R, Sun JX, Zhang L, Kuech TF. The nature and impact of ZNO buffer layers on the initial stages of the hydride vapor phase epitaxy of GAN. MRS Internet Journal of Nitride Semiconductor Research. 2000 ;5:art. no.-W3.15.
Herndon MK, Bradford WC, Collins RT, Hawkins BE, Kuech TF, Friedman DJ, Kurtz SR. Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells. Applied Physics Letters. 2000 ;77:100-102.
Maxson JB, Perkins N, Savage DE, Woll AR, Zhang L, Kuech TF, Lagally MG. Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy. Surface Science. 2000 ;464:217-222.
Cederberg JG, Bieg B, Huang JW, Stockman SA, Peanasky MJ, Kuech TF. Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE. Journal of Electronic Materials. 2000 ;29:426-429.
Sun JX, Rickert KA, Redwing JM, Ellis AB, Himpsel FJ, Kuech TF. p-GaN surface treatments for metal contacts. Applied Physics Letters. 2000 ;76:415-417.
Gu SL, Zhang R, Sun JX, Zhang L, Kuech TF. Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN. Applied Physics Letters. 2000 ;76:3454-3456.
Zhang R, Shi Y, Zhou YG, Shen B, Zheng YD, Kuan TS, Gu SL, Zhang L, Hansen DM, Kuech TF. Structural properties of laterally overgrown GaN. MRS Internet Journal of Nitride Semiconductor Research. 2000 ;5.
Seker F, Meeker K, Kuech TF, Ellis AB. Surface chemistry of prototypical bulk II-VI and III-V semiconductors and implications for chemical sensing. Chemical Reviews. 2000 ;100:2505-2536.
Zheng Y, Moran PD, Guan ZF, Lau SS, Hansen DM, Kuech TF, Haynes TE, Hoechbauer T, Nastasi M. Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding. Journal of Electronic Materials. 2000 ;29:916-920.
1999
Sun JX, Seo DJ, O'Brien WL, Himpsel FJ, Ellis AB, Kuech TF. Chemical bonding and electronic properties of SeS2-treated GaAs(100). Journal of Applied Physics. 1999 ;85:969-977.
Zhang R, Zhang L, Hansen DM, Boleslawski MP, Chen KL, Lu DQ, Shen B, Zheng YD, Kuech TF. Epitaxial lateral overgrowth of GaN with chloride-based growth chemistries in both hydride and metalorganic vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 1999 ;4.
Zhang L, Zhang R, Boleslawski MP, Kuech TF. Gallium nitride growth using diethylgallium chloride as an alternative gallium source. MRS Internet Journal of Nitride Semiconductor Research. 1999 ;4.
Li J, Kuech TF. Impurity incorporation and the surface morphology of MOVPE grown GaAs. Journal of Electronic Materials. 1999 ;28:124-133.
Cederberg JG, Culp TD, Bieg B, Pfeiffer D, Winter CH, Bray KL, Kuech TF. Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium. Journal of Applied Physics. 1999 ;85:1825-1831.
Moran PD, Hansen DM, Matyi RJ, Cederberg JG, Mawst LJ, Kuech TF. InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality. Applied Physics Letters. 1999 ;75:1559-1561.
Ellis AB, Kuech TF, Lisensky GC, Campbell DJ, Condren SM, Nordell KJ. Making the nanoworld comprehensible: Instructional materials for schools and outreach. Journal of Nanoparticle Research. 1999 ;1:147-150.
Kim S, Li X, Coleman JJ, Zhang R, Hansen DM, Kuech TF, Bishop SG. Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 1999 ;4.
Reuter EE, Zhang R, Kuech TF, Bishop SG. Photoluminescence excitation spectroscopy of carbon-doped gallium nitride. MRS Internet Journal of Nitride Semiconductor Research. 1999 ;4:art. no.-G3.67.
Moran PD, Hansen DM, Matyi RJ, Redwing JM, Kuech TF. Realization and characterization of ultrathin GaAs-on-insulator structures. Journal of the Electrochemical Society. 1999 ;146:3506-3509.
Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of AlN on Si (111) deposited with metal organic vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 1999 ;4:art. no.-G3.56.
Pfeiffer D, Ximba BJ, Liable-Sands LM, Rheingold AL, Heeg MJ, Coleman DM, Schlegel HB, Kuech TF, Winter CH. Synthesis, structure, and molecular orbital studies of yttrium, erbium, and lutetium complexes bearing eta(2)-pyrazolato ligands: Development of a new class of precursors for doping semiconductors. Inorganic Chemistry. 1999 ;38:4539-4548.
Sun JX, Redwing JM, Kuech TF. Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride. Physica Status Solidi A-Applied Research. 1999 ;176:693-698.
1998
Lorenz JK, Kuech TF, Ellis AB. Cadmium selenide photoluminescence as a probe for the surface adsorption of dialkyl chalcogenides. Langmuir. 1998 ;14:1680-1683.
Campbell DJ, Lorenz JK, Ellis AB, Kuech TF, Lisensky GC, Whittingham MS. The computer as a materials science benchmark. Journal of Chemical Education. 1998 ;75:297-312.
Hansen DM, Moran PD, Dunn KA, Babcock SE, Matyi RJ, Kuech TF. Development of a glass-bonded compliant substrate. Journal of Crystal Growth. 1998 ;195:144-150.
Li J, Mirabedini A, Mawst LJ, Savage DE, Matyi RJ, Kuech TF. Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes. Journal of Crystal Growth. 1998 ;195:617-623.
Cederberg JG, Culp TD, Bieg B, Pfeiffer D, Winter CH, Bray KL, Kuech TF. Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium. Journal of Crystal Growth. 1998 ;195:105-111.
Rudkevich E, Liu F, Savage DE, Kuech TF, McCaughan L, Lagally MG. Hydrogen induced Si surface segregation on Ge-covered Si(001). Physical Review Letters. 1998 ;81:3467-3470.
Zhang R, Kuech TF. Hydrogen induced yellow luminescence in GaN grown by halide vapor phase epitaxy. Journal of Electronic Materials. 1998 ;27:L35-L39.
Sun JX, Zhang L, Kuech TF. In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy. Journal of Crystal Growth. 1998 ;195:711-717.
Cederberg JG, Bieg B, Huang JW, Stockman SA, Peanasky MJ, Kuech TF. Intrinsic and oxygen-related deep level defects in In-0.5(AlxGa1-x)(0.5)P grown by metal-organic vapor phase epitaxy. Journal of Crystal Growth. 1998 ;195:63-68.
Bandic ZZ, Piquette EC, Bridger PM, Beach RA, Kuech TF, McGill TC. Nitride based high power devices: Design and fabrication issues. Solid-State Electronics. 1998 ;42:2289-2294.
Culp TD, Cederberg JG, Bieg B, Kuech TF, Bray KL, Pfeiffer D, Winter CH. Photoluminescence and free carrier interactions in erbium-doped GaAs. Journal of Applied Physics. 1998 ;83:4918-4927.
Zhang R, Kuech TF. Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy. Applied Physics Letters. 1998 ;72:1611-1613.
Hansen DM, Zhang R, Perkins NR, Safvi S, Zhang L, Bray KL, Kuech TF. Photoluminescence of erbium-implanted GaN and in situ-doped GaN : Er. Applied Physics Letters. 1998 ;72:1244-1246.
Winder EJ, Kuech TF, Ellis AB. Photoluminescence studies of cadmium selenide crystals in contact with group III trialkyl derivatives. Journal of the Electrochemical Society. 1998 ;145:2475-2479.
Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, et al. Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films. Thin Solid Films. 1998 ;313:187-192.
Gilliland GD, Petrovic MS, Hjalmarson HP, Wolford DJ, Northrop GA, Kuech TF, Smith LM, Bradley JA. Time-dependent heterointerfacial band bending and quasi-two-dimensionl excitonic transport in GaAs structures. Physical Review B. 1998 ;58:4728-4732.
1997
Botez D, Mawst LJ, Bhattacharya A, Lopez J, Li J, Kuech TF, Iakovlev VP, Suruceanu GI, Caliman A, Syrbu AV, et al. 6W CW front-facet power from short-cavity (0.5 mm), 100 mu m stripe Al-free 0.98 mu m-emitting diode lasers. Electronics Letters. 1997 ;33:2037-2039.
Rudkevich E, Saulys D, Gaines D, Kuech TF, McCaughan L. Adsorption and decomposition studies of t-butyl silane on Si(100)-(2x1) surfaces using FTIR-ATR spectroscopy. Surface Science. 1997 ;383:69-77.
Buchwald WR, Jones KA, Zhao JH, Huang JW, Kuech TF. A comparison of pnpn and oxygen-doped pn-i-pn GaAs thyristors. IEEE Transactions on Electron Devices. 1997 ;44:1154-1157.
Safvi SA, Perkins NR, Horton MN, Matyi R, Kuech TF. Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN/sapphire grown by hydride vapor-phase epitaxy. Journal of Crystal Growth. 1997 ;182:233-240.
Liu QZ, Shen L, Smith KV, Tu CW, Yu ET, Lau SS, Perkins NR, Kuech TF. Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy. Applied Physics Letters. 1997 ;70:990-992.
Li J, Kuech TF. Evolution of surface structure during carbon doping in the metal-organic vapor-phase epitaxial growth of GaAs. Journal of Crystal Growth. 1997 ;181:171-180.
Rudkevich E, Savage DE, Cai W, Bean JC, Sullivan JS, Nayak S, Kuech TF, McCaughan L, Lagally MG. Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism. Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1997 ;15:2153-2157.
Liu JT, Zhi D, Redwing JM, Tischler MA, Kuech TF. GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction. Journal of Crystal Growth. 1997 ;170:357-361.
Safvi SA, Redwing JM, Tischler MA, Kuech TF. GaN growth by metallorganic vapor phase epitaxy - A comparison of modeling and experimental measurements. Journal of the Electrochemical Society. 1997 ;144:1789-1796.

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