All Faculty and Research Staff Publications

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2016
Chen WX, Ronsheim PA, Wood AW, Forghani K, Guan YX, Kuech TF, Babcock SE. Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1-xBix/GaAs superlattice. Journal of Crystal Growth. 2016 ;446:27-32.
Kuech TF, Babcock SE, Mawst L. Growth far from equilibrium: Examples from III-V semiconductors. Applied Physics Reviews. 2016 ;3.
Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ. Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics. Journal of Crystal Growth. 2016 ;452:276-280.
Li JC, Collar K, Jiao WY, Kong W, Kuech TF, Babcock SE, Brown A. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix. Applied Physics Letters. 2016 ;108.
Jackson DHK, Laskar MR, Fang S, Xu S, Ellis RG, Li X, Dreibelbis M, Babcock SE, Mahanthappa MK, Morgan D, et al. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and FilmsJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2016 ;34.
Jackson DHK, Laskar MR, Fang SY, Xu SZ, Ellis RG, Li XQ, Dreibelbis M, Babcock SE, Mahanthappa MK, Morgan D, et al. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes. Journal of Vacuum Science & Technology A. 2016 ;34.
Jackson DHK, Laskar MR, Fang SY, Xu SZ, Ellis RG, Li XQ, Dreibelbis M, Babcock SE, Mahanthappa MK, Morgan D, et al. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes. Journal of Vacuum Science & Technology A. 2016 ;34.
Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li XQ, Sigler C, Babcock SE, et al. Regrowth of quantum cascade laser active regions on metamorphic buffer layers. Journal of Crystal Growth. 2016 ;452:268-271.
2000
Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire. MRS Internet Journal of Nitride Semiconductor Research. 2000 ;5:art. no.-W2.11.
1999
Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of AlN on Si (111) deposited with metal organic vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 1999 ;4:art. no.-G3.56.