All Faculty and Research Staff Publications

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2003
Hsu JWP, Schrey FF, Matthews MJ, Gu SL, Kuech TF. Impurity effects on photoluminescence in lateral epitaxially overgrown GaN. Journal of Electronic Materials. 2003 ;32:322-326.
Wang F, Zhang R, Xiu XQ, Chen KL, Gu SL, Shen B, Zheng YD, Kuech TF. Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching. Materials Letters. 2003 ;57:1365-1368.
Wang F, Zhang R, Xiu XQ, Chen KL, Gu SL, Shen B, Zheng YD, Kuech TF. Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching. Materials Letters. 2003 ;57:1365-1368.
Kim JK, Jang HW, Kim CC, Je JH, Rickert KA, Kuech TF, Lee JL. Microstructural study of Pt contact on p-type GaN. Journal of Vacuum Science & Technology B. 2003 ;21:87-90.
Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates. Applied Physics Letters. 2003 ;83:1977-1979.
Dwikusuma F, Mayer J, Kuech TF. Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy. Journal of Crystal Growth. 2003 ;258:65-74.
Rehder EM, Inoki CK, Kuan TS, Kuech TF. SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study. Journal of Applied Physics. 2003 ;94:7892-7903.
Dwikusuma F, Kuech TF. X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism. Journal of Applied Physics. 2003 ;94:5656-5664.
Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, Dwikusuma F, Kuech TF. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN. Applied Physics Letters. 2003 ;82:3254-3256.
Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, Dwikusuma F, Kuech TF. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN. Applied Physics Letters. 2003 ;82:3254-3256.
2002
Zhang L, Tang HF, Schieke J, Mavrikakis M, Kuech TF. The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy. Journal of Applied Physics. 2002 ;92:2304-2309.
Babcock SE, Kuech TF, Jr JAFreitas. Bulk nitride semiconductors 2002 - Proceedings of the International Workshop on Bulk Nitride Semiconductors, Amazonas, Brazil, 18-23 May 2002 - Preface. Journal of Crystal Growth. 2002 ;246:VII-VII.
Gu S, Zhang R, Shi Y, Zheng Y, Zhang L, Kuech TF. Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers. Applied Physics a-Materials Science & Processing. 2002 ;74:537-540.
Zhang L, Tang HF, Schieke J, Mavrikakis M, Kuech TF. Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2002 ;242:302-308.
Wang F, Zhang R, Tan WS, Xiu XQ, Lu DQ, Gu SL, Shen B, Shi Y, Wu XS, Zheng YD, et al. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy. Applied Physics Letters. 2002 ;80:4765-4767.
Wang F, Zhang R, Tan WS, Xiu XQ, Lu DQ, Gu SL, Shen B, Shi Y, Wu XS, Zheng YD, et al. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy. Applied Physics Letters. 2002 ;80:4765-4767.
Zhang L, Gu SL, Zhang R, Hansen DM, Boleslawski MP, Kuech TF. Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy. Journal of Crystal Growth. 2002 ;235:115-123.
Paulson CA, Ellis AB, Moran PD, Kuech TF. Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy. Journal of Applied Physics. 2002 ;91:2785-2790.
Paulson CA, Ellis AB, Moran PD, Kuech TF. Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy. Journal of Applied PhysicsJournal of Applied Physics. 2002 ;91:2785-2790.
Rickert KA, Ellis AB, Himpsel FJ, Sun J, Kuech TF. n-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy. Applied Physics Letters. 2002 ;80:204-206.
Rickert KA, Ellis AB, Himpsel FJ, Sun J, Kuech TF. n-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy. Applied Physics Letters. 2002 ;80:204-206.
Condren SM, Breitzer JG, Payne AC, Ellis AB, Widstrand CG, Kuech TF. Student-centered, nanotechnology-enriched introductory college chemistry courses for engineering students. International Journal of Engineering Education. 2002 ;18:550-556.
Condren SM, Breitzer JG, Payne AC, Ellis AB, Widstrand CG, Kuech TF. Student-centered, nanotechnology-enriched introductory college chemistry courses for engineering students. International Journal of Engineering Education. 2002 ;18:550-556.
Dwikusuma F, Saulys D, Kuech TF. Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments. Journal of the Electrochemical Society. 2002 ;149:G603-G608.
Rickert KA, Ellis AB, Kim JK, Lee JL, Himpsel FJ, Dwikusuma F, Kuech TF. X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN. Journal of Applied Physics. 2002 ;92:6671-6678.
Rickert KA, Ellis AB, Kim JK, Lee JL, Himpsel FJ, Dwikusuma F, Kuech TF. X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN. Journal of Applied PhysicsJournal of Applied Physics. 2002 ;92:6671-6678.
2001
Kuech TF. Bulk nitride growth and related techniques - International Specialist Meeting on Bulk Nitride Growth and Related Techniques - Foz Do Iguacu, Brazil, 12-16 November 2000 - Preface. Journal of Crystal Growth. 2001 ;231:VII-VII.
Matthews MJ, Hsu JWP, Gu S, Kuech TF. Carrier density imaging of lateral epitaxially overgrown GaN using scanning confocal Raman microscopy. Applied Physics Letters. 2001 ;79:3086-3088.
Hansen DM, Albaugh CE, Moran PD, Kuech TF. Chemical investigations of GaAs wafer bonded interfaces. Journal of Applied Physics. 2001 ;90:5991-5999.
Hansen DM, Albaugh CE, Moran PD, Kuech TF. Chemical role of oxygen plasma in wafer bonding using borosilicate glasses. Applied Physics Letters. 2001 ;79:3413-3415.
Zhang L, Tang HF, Kuech TF. Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy. Applied Physics Letters. 2001 ;79:3059-3061.
Chowdhury A, Staus C, Boland BF, Kuech TF, McCaughan L. Experimental demonstration of 1535-1555-nm simultaneous optical wavelength interchange with a nonlinear photonic crystal. Optics Letters. 2001 ;26:1353-1355.
Moran PD, Chow D, Hunter A, Kuech TF. Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding. Applied Physics Letters. 2001 ;78:2232-2234.
Gu SL, Zhang R, Shi Y, Zheng YD, Zhang L, Dwikusuma F, Kuech TF. The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy. Journal of Crystal Growth. 2001 ;231:342-351.
Moran PD, Kuech TF. Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates. Journal of Electronic Materials. 2001 ;30:802-806.
Condren SM, Lisensky GC, Ellis AB, Nordell KJ, Kuech TF, Stockman SA. LEDs: New lamps for old and a paradigm for ongoing curriculum modernization. Journal of Chemical Education. 2001 ;78:1033-1040.
Condren SM, Lisensky GC, Ellis AB, Nordell KJ, Kuech TF, Stockman SA. LEDs: New lamps for old and a paradigm for ongoing curriculum modernization. Journal of Chemical EducationJournal of Chemical Education. 2001 ;78:1033-1040.
Yi SS, Moran PD, Zhang X, Cerrina F, Carter J, Smith HI, Kuech TF. Oriented crystallization of GaSb on a patterned, amorphous Si substrate. Applied Physics Letters. 2001 ;78:1358-1360.
Ivanisevic A, Yeh JY, Mawst L, Kuech TF, Ellis AB. Semiconductor devices - Light-emitting diodes as chemical sensors. NatureNature. 2001 ;409:476-476.
Ivanisevic A, Yeh JY, Mawst L, Kuech TF, Ellis AB. Semiconductor devices - Light-emitting diodes as chemical sensors. Nature. 2001 ;409:476-476.
Hsu JWP, Matthews MJ, Abusch-Magder D, Kleiman RN, Lang DV, Richter S, Gu SL, Kuech TF. Spatial variation of electrical properties in lateral epitaxially overgrown GaN. Applied Physics Letters. 2001 ;79:761-763.
2000
Paulson C, Ellis AB, McCaughan L, Hawkins B, Sun JX, Kuech TF. Demonstration of near-field scanning photoreflectance spectroscopy. Applied Physics Letters. 2000 ;77:1943-1945.
Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire. MRS Internet Journal of Nitride Semiconductor Research. 2000 ;5:art. no.-W2.11.
Kuan TS, Inoki CK, Hsu Y, Harris DL, Zhang R, Gu S, Kuech TF. Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 2000 ;5:art. no.-W2.6.
Saulys D, Joshkin V, Khoudiakov M, Kuech TF, Ellis AB, Oktyabrsky SR, McCaughan L. An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions. Journal of Crystal Growth. 2000 ;217:287-301.
Moran PD, Hansen DM, Matyi RJ, Mawst LJ, Kuech TF. Experimental test for elastic compliance during growth on glass-bonded compliant substrates. Applied Physics Letters. 2000 ;76:2541-2543.
Zhang L, Gu SL, Kuech TF, Boleslawski MP. Gallium nitride growth using diethyl gallium chloride as an alternative gallium source. Journal of Crystal Growth. 2000 ;213:1-9.
Watwe RM, Dumesic JA, Kuech TF. Gas-phase chemistry of metalorganic and nitrogen-bearing compounds. Journal of Crystal Growth. 2000 ;221:751-757.
Joshkin VA, Moran P, Saulys D, Kuech TF, McCaughan L, Oktyabrsky SR. Growth of oriented lithium niobate on silicon by alternating gas flow chemical beam epitaxy with metalorganic precursors. Applied Physics Letters. 2000 ;76:2125-2127.
Bieg B, Cederberg JG, Kuech TF. High-temperature hysteretic electronic effects of (AlxGa1-x)(0.5)In0.5P (x > 0.65). Journal of Electronic Materials. 2000 ;29:231-236.

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