All Faculty and Research Staff Publications

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Chu RM, Zheng YD, Zhou YG, Han P, Shen B, Gu SL. Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. Applied Physics a-Materials Science & ProcessingApplied Physics a (Materials Science Processing). 2002 ;75:387-389.