All Faculty and Research Staff Publications

Export 14 results:
Filters: Author is Gu, S. L.  [Clear All Filters]
2002
Chu RM, Zheng YD, Zhou YG, Han P, Shen B, Gu SL. Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. Applied Physics a-Materials Science & ProcessingApplied Physics a (Materials Science Processing). 2002 ;75:387-389.
Wang F, Zhang R, Tan WS, Xiu XQ, Lu DQ, Gu SL, Shen B, Shi Y, Wu XS, Zheng YD, et al. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy. Applied Physics Letters. 2002 ;80:4765-4767.
Xi DJ, Zheng YD, Chen P, Zhao ZM, Xie SY, Jiang RL, Shen B, Gu SL, Zhang R. Interfacial properties of AlN/Si (111) grown by metal-organic chemical vapour deposition. Chinese Physics Letters. 2002 ;19:543-545.
Shi Y, Shen B, Bu HM, Yuan XL, Gu SL, Han P, Zhang R, Zheng YD. Investigation of switching kinetics of interface traps in metal-oxide-semiconductor-field-effect-transistors with ultra-narrow channels. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review PapersJapanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. 2002 ;41:2363-2366.
Zhang L, Gu SL, Zhang R, Hansen DM, Boleslawski MP, Kuech TF. Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy. Journal of Crystal Growth. 2002 ;235:115-123.
Xi DJ, Zheng YD, Chen P, Zhao ZM, Xie SY, Shen B, Gu SL, Zhang R. Microstructures of AlGaN/AlN/Si (111) grown by metalorganic chemical vapor deposition. Physica Status Solidi A-Applied ResearchPhysica Status Solidi A-Applied Research. 2002 ;191:137-142.