All Faculty and Research Staff Publications

Export 21 results:
Filters: Author is Zhang, R.  [Clear All Filters]
2002
Gu S, Zhang R, Shi Y, Zheng Y, Zhang L, Kuech TF. Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers. Applied Physics a-Materials Science & Processing. 2002 ;74:537-540.
Wang F, Zhang R, Tan WS, Xiu XQ, Lu DQ, Gu SL, Shen B, Shi Y, Wu XS, Zheng YD, et al. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy. Applied Physics Letters. 2002 ;80:4765-4767.
Xi DJ, Zheng YD, Chen P, Zhao ZM, Xie SY, Jiang RL, Shen B, Gu SL, Zhang R. Interfacial properties of AlN/Si (111) grown by metal-organic chemical vapour deposition. Chinese Physics Letters. 2002 ;19:543-545.
Shi Y, Shen B, Bu HM, Yuan XL, Gu SL, Han P, Zhang R, Zheng YD. Investigation of switching kinetics of interface traps in metal-oxide-semiconductor-field-effect-transistors with ultra-narrow channels. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review PapersJapanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers. 2002 ;41:2363-2366.
Zhang L, Gu SL, Zhang R, Hansen DM, Boleslawski MP, Kuech TF. Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy. Journal of Crystal Growth. 2002 ;235:115-123.
Xi DJ, Zheng YD, Chen P, Zhao ZM, Xie SY, Shen B, Gu SL, Zhang R. Microstructures of AlGaN/AlN/Si (111) grown by metalorganic chemical vapor deposition. Physica Status Solidi A-Applied ResearchPhysica Status Solidi A-Applied Research. 2002 ;191:137-142.
Xie SY, Zheng YD, Chen P, Zhang R, Shen B, Chen H. Optical properties of Mg-implanted GaN. Applied Physics a-Materials Science & ProcessingApplied Physics a (Materials Science Processing). 2002 ;75:363-365.
Jiang RL, Wang JZ, Chen P, Zhao ZM, Mei YF, Shen B, Zhang R, Wu XL, Zheng YD. Photocurrent property of GaN on the Si photodetector with a nearly polycrystalline alpha-Al2O3 buffer layer. Chinese Physics Letters. 2002 ;19:1553-1555.