All Faculty and Research Staff Publications

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2008
Jha S, Song XY, Babcock SE, Kuech TF, Wheeler D, Wu B, Fay P, Seabaugh A. Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2008 ;310:4772-4775.
Huang JYT, Xu DP, Song X, Babcock SE, Kuech TF, Mawst LJ. Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates. Journal of Crystal Growth. 2008 ;310:2382-2389.
Chen P, Jing Y, Lau SS, Xu DP, Mawst L, Alford TL, Paulson C, Kuech TF. High crystalline-quality III-V layer transfer onto Si substrate. Applied Physics Letters. 2008 ;92.
Kortunova EV, Nikolaeva NG, Chvanski PP, Maltsev VV, Volkova EA, Koporulina EV, Leonyuk NI, Kuech TF. Hydrothermal synthesis of improved ZnO crystals for epitaxial growth of GaN thin films. Journal of Materials Science. 2008 ;43:2336-2341.
Chen W, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Integration of thin layers of single-crystalline InP with flexible substrates. Applied Physics Letters. 2008 ;92.
Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song XY, Babcock SE, Meyer JR, Vurgaftman I. MOVPE growth of antimonide-containing alloy materials for long wavelength applications. Journal of Crystal Growth. 2008 ;310:4826-4830.
Huang JYT, Mawst LJ, Jha S, Kuech TF, Wang D, Shterengas L, Belenky G, Meyer JR, Vurgaftman I. MOVPE growth of Ga(As)SbN on GaSb substrates. Journal of Crystal Growth. 2008 ;310:4839-4842.
Song X, Babcock SE, Paulson CA, Kuech TF, Huang JYT, Xu DP, Park J, Mawst LJ. Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP. Journal of Crystal Growth. 2008 ;310:2377-2381.
Su N, Tang Y, Zhang Z, Kuech TF, Fay P. Observation and control of electrochemical etching effects in the fabrication of InAs/AlSb/GaSb heterostructure devices. Journal of Vacuum Science & Technology B. 2008 ;26:1025-1029.
Uhlrich JJ, Grabow LC, Mavrikakis M, Kuech TF. Practical surface treatments and surface chemistry of n-type and p-type GaN. Journal of Electronic Materials. 2008 ;37:439-447.
2007
Xu DP, Huang JYT, Park J, Mawst LJ, Kuech TF, Song X, Babcock SE. Annealing of dilute-nitride GaAsSbN/InP strained multiple quantum wells. Applied Physics Letters. 2007 ;91.
Xu DP, Huang JYT, Park JH, Mawst LJ, Kuech TF, Vurgaftman I, Meyer JR. Characteristics of dilute-nitride GaAsSbN/InP strained multiple quantum wells. Applied Physics Letters. 2007 ;90.
Huang JYT, Xu DP, Park JH, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. Characteristics of strained GaAs1-ySby (0.16 <= y <= 0.69) quantum wells on InP substrates. Journal of Physics D-Applied Physics. 2007 ;40:7656-7661.
Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Development of lateral epitaxial overgrown InAs microstructure on patterned (100)GaAs substrates. Journal of Optoelectronics and Advanced Materials. 2007 ;9:1242-1245.
Chen W, Chen P, Jing Y, Lau SS, Kuech TF, Liu JR, Wang XM, Chu WK. Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process. Applied Physics Letters. 2007 ;90.
Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2007 ;303:456-465.
Huang JYT, Xu DR, Mawst LJ, Kuech TF, Vurgaftman I, Meyer JR. GaAsSbN-GaAsSb-InP type-II "W" quantum wells for mid-IR emission. Ieee Journal of Selected Topics in Quantum Electronics. 2007 ;13:1065-1073.
Clayton AJ, Khandekar AA, Kuech TF, Mason NJ, Robinson MF, Watkins S, Guo Y. Growth of AIN by vectored flow epitaxy. Journal of Crystal Growth. 2007 ;298:328-331.
Khandekar AA, Yeh JY, Mawst LJ, Song XY, Babcock SE, Kuech TF. Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2007 ;298:154-158.
Slotte J, Gonzalez-Debs M, Kuech TF, Cederberg JG. Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures. Journal of Applied Physics. 2007 ;102.
Uhlrich J, Garcia M, Wolter S, Brown AS, Kuech TF. Interfacial chemistry and energy band line-up of pentacene with the GaN (0001) surface. Journal of Crystal Growth. 2007 ;300:204-211.
Liu N, Kuech TF. Interfacial chemistry of InP/GaAs bonded pairs. Journal of Electronic Materials. 2007 ;36:179-190.
Allen CG, Dorr JC, Khandekar AA, Beach JD, Schick IC, Schick EJ, Collins RT, Kuech TF. Microcontact printing of indium metal using salt solution "ink". Thin Solid Films. 2007 ;515:6812-6816.
Gokhale AA, Kuech TF, Mavrikakis M. A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growth. Journal of Crystal Growth. 2007 ;303:493-499.
2006
Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Characteristics of InGaAsN-GaAsSb type-II "W" quantum wells. Journal of Crystal Growth. 2006 ;287:615-619.
Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (100) GaAs. Journal of Crystal Growth. 2006 ;292:40-52.
Rathi MK, Hawkins BE, Kuech TF. Growth behavior of GaSb by metal-organic vapor-phase epitaxy. Journal of Crystal Growth. 2006 ;296:117-128.
Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Long wavelength emission of InGaAsN/GaAsSb type II "W" quantum wells. Applied Physics Letters. 2006 ;88.
Debs MG, Kuech TF. Phenomenological modeling of diffusion profiles: Sn in GaAs. Journal of Applied Physics. 2006 ;99.
Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, Wang XY, Kuech TF, Hamers RJ. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers. Langmuir. 2006 ;22:8121-8126.
Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, Wang X, Kuech TF, Hamers RJ. Photochemical Functionalization of Gallium Nitride Thin Films with Molecular and Biomolecular Layers. Langmuir. 2006 ;22:8121-8126.
Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, Wang X, Kuech TF, Hamers RJ. Photochemical Functionalization of Gallium Nitride Thin Films with Molecular and Biomolecular Layers. Langmuir. 2006 ;22:8121-8126.
Park JH, Khandekar AA, Park SM, Mawst LJ, Kuech TF, Nealey PF. Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers. Journal of Crystal Growth. 2006 ;297:283-288.
Kim NH, Park JH, Mawst LJ, Kuech TF, Kanskar M. Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD. Ieee Photonics Technology Letters. 2006 ;18:989-991.
2004
Kimura A, Liu ZY, Kuech TF. Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy. Journal of Crystal Growth. 2004 ;272:432-437.
Hawkins BE, Khandekar AA, Yeh JY, Mawst LJ, Kuech TF. Effects of gas switching sequences on GaAs/GaAs1-Sb-y(y) superlattices. Journal of Crystal Growth. 2004 ;272:686-693.
Kimura A, Paulson CA, Tang HF, Kuech TF. Epitaxial GaN1-yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy. Applied Physics Letters. 2004 ;84:1489-1491.
Beach JD, Veauvy C, Caputo R, Collins RT, Khandekar AA, Kuech TF, Inoki CK, Kuan TS, Hollingsworth RE. Formation of regular arrays of submicron GaAs dots on silicon. Applied Physics Letters. 2004 ;84:5323-5325.
Kimura A, Tang HF, Kuech TF. Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy. Journal of Crystal Growth. 2004 ;265:71-77.
Liu ZY, Saulys DA, Kuech TF. Improved characteristics for Au/n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation. Applied Physics Letters. 2004 ;85:4391-4393.
Liu ZY, Gokhale AA, Mavrikakis M, Saulys DA, Kuech TF. Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te. Journal of Applied Physics. 2004 ;96:4302-4307.
Wu J, Walukiewicz W, Yu KM, Denlinger JD, Shan W, Ager JW, Kimura A, Tang HF, Kuech TF. Valence band hybridization in N-rich GaN1-xAsx alloys. Physical Review B. 2004 ;70.

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