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Kuech TF. The Use of Au-Cd Alloys to Achieve Large Schottky-Barrier Heights on Cdte. Journal of Applied Physics. 1981 ;52:4874-4876.
Kuech TF, Potemski R, Cardone F, Scilla G. QUANTITATIVE OXYGEN MEASUREMENTS IN OMVPE ALXGA1-XAS GROWN BY METHYL PRECURSORS. Journal of Electronic Materials. 1992 ;21:341-346.
Kuech TF, Potemski R, Cardone F. GROWTH-BEHAVIOR OF (C2H5)2GACL AND ASH3 BASED GAAS - LOW REACTOR PRESSURE AND TEMPERATURES. Journal of Crystal Growth. 1992 ;124:318-325.
Kuech TF, Goorsky MS, Tischler MA, Palevski A, Solomon P, Potemski R, Tsai CS, Lebens JA, Vahala KJ. SELECTIVE EPITAXY OF GAAS, ALXGA1-XAS, AND INXGA1-XAS. Journal of Crystal Growth. 1991 ;107:116-128.
Kuech TF, Veuhoff E, Meyerson BS. SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION. Journal of Crystal Growth. 1984 ;68:48-53.
Kuech TF, Veuhoff E. MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS. Journal of Crystal Growth. 1984 ;68:148-156.
Kuech TF, Meyerson BS, Veuhoff E. DISILANE - A NEW SILICON DOPING SOURCE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS. Applied Physics Letters. 1984 ;44:986-988.
Kuech TF, Wolford DJ, Veuhoff E, Deline V, Mooney PM, Potemski R, Bradley J. PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS. Journal of Applied Physics. 1987 ;62:632-643.
Kuech TF, Wolford DJ, Potemski R, Bradley JA, Kelleher KH, Yan D, Farrell JP, Lesser PMS, Pollak FH. DEPENDENCE OF THE ALXGA1-XAS BAND EDGE ON ALLOY COMPOSITION BASED ON THE ABSOLUTE MEASUREMENT OF X. Applied Physics Letters. 1987 ;51:505-507.
Kuech TF, Wang PJ, Tischler MA, Potemski R, Scilla GJ, Cardone F. THE CONTROL AND MODELING OF DOPING PROFILES AND TRANSIENTS IN MOVPE GROWTH. Journal of Crystal Growth. 1988 ;93:624-630.
Kuech TF, Veuhoff E, Kuan TS, Deline V, Potemski R. THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES. Journal of Crystal Growth. 1986 ;77:257-271.
Kuech TF, Tischler MA, Wang PJ, Scilla G, Potemski R, Cardone F. CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY. Applied Physics Letters. 1988 ;53:1317-1319.
Kuech TF, Scilla GJ, Cardone F. THE INFLUENCE OF HYDROCARBONS IN MOVPE GAAS GROWTH - IMPROVED DETECTION OF CARBON BY SECONDARY ION MASS-SPECTROSCOPY. Journal of Crystal Growth. 1988 ;93:550-556.
Kuech TF, Potemski R, Chappell TI. CHARACTERIZATION OF SILICON IMPLANTED GAAS BUFFER LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION. Journal of Applied Physics. 1985 ;58:1196-1203.
Kuech TF, Potemski R. REDUCTION OF BACKGROUND DOPING IN METALORGANIC VAPOR-PHASE EPITAXY OF GAAS USING TRIETHYLGALLIUM AT LOW REACTOR PRESSURES. Applied Physics Letters. 1985 ;47:821-823.
Kuech TF, Marshall E, Scilla GJ, Potemski R, Ransom CM, Hung MY. THE EFFECT OF SURFACE PREPARATION ON THE PRODUCTION OF LOW INTERFACIAL CHARGE REGROWN INTERFACES. Journal of Crystal Growth. 1986 ;77:539-545.
Kuech TF, Tischler MA, Potemski R, Cardone F, Scilla G. DOPING AND DOPANT BEHAVIOR IN (AL,GA)AS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1989 ;98:174-187.
Kuech TF, Tischler MA, Potemski R. SELECTIVE EPITAXY IN THE CONVENTIONAL METALORGANIC VAPOR-PHASE EPITAXY OF GAAS. Applied Physics Letters. 1989 ;54:910-912.
Kuech TF, Tischler MA, Buchan NI, Potemski R. SELECTIVE EPITAXY OF MOVPE GAAS USING DIETHYL GALLIUM CHLORIDE. Journal of Crystal Growth. 1990 ;99:324-328.
Kuech TF, Segmuller A, Kuan TS, Goorsky MS. GROWTH AND PROPERTIES OF THIN GAAS EPITAXIAL LAYERS ON AL2O3. Journal of Applied Physics. 1990 ;67:6497-6506.
Kuech TF, Collins RT, Smith DL, Mailhiot C. FIELD-EFFECT TRANSISTOR STRUCTURE BASED ON STRAIN-INDUCED POLARIZATION CHARGES. Journal of Applied Physics. 1990 ;67:2650-2652.
Kuech TF. THIN-LAYER FORMATION - PREFACE. Ibm Journal of Research and Development. 1990 ;34:794-794.
Kuech TF, McGaldin JO. COMPOSITIONAL DEPENDENCE OF SCHOTTKY-BARRIER HEIGHTS FOR AU ON CHEMICALLY ETCHED INXGA1-XP SURFACES. Journal of Vacuum Science & Technology. 1980 ;17:891-893.
Kuech TF, McCaldin JO. BEHAVIOR OF SUBSTRATE-CONFINED LIQUIDS FOR INSITU CRYSTALLIZATION OF SEMICONDUCTORS. Thin Solid Films. 1982 ;97:9-16.
Kuech TF, McCaldin JO. HGTE/CDTE HETEROJUNCTIONS - A LATTICE-MATCHED SCHOTTKY-BARRIER STRUCTURE. Journal of Applied Physics. 1982 ;53:3121-3128.
Kuech TF, McCaldin JO. LOW-TEMPERATURE CVD GROWTH OF EPITAXIAL HGTE ON CDTE. Journal of the Electrochemical Society. 1981 ;128:1142-1144.
Kuech TF, McCaldin JO. CONFINING SUBSTRATE FOR MICRON-THICK LIQUID-FILMS. Applied Physics Letters. 1980 ;37:44-46.
Kuech TF, Maenpaa M, Lau SS. EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE. Applied Physics Letters. 1981 ;39:245-247.
Kuech TF. PERSPECTIVES ON METAL ORGANIC VAPOR-PHASE EPITAXY GROWTH - CHEMISTRY, STRUCTURES AND SYSTEMS. Thin Solid Films. 1992 ;216:77-83.
Kuech TF. RECENT ADVANCES IN METAL-ORGANIC VAPOR-PHASE EPITAXY. Proceedings of the Ieee. 1992 ;80:1609-1624.
Kuech TF. THE USE OF CHLORIDE BASED PRECURSORS IN METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1991 ;115:52-60.
Kuech TF, Redwing JM. CARBON DOPING IN METALORGANIC VAPOR-PHASE EPITAXY. Journal of Crystal Growth. 1994 ;145:382-389.
Kuech TF. SELECTIVE EPITAXY OF COMPOUND SEMICONDUCTORS - NOVEL SOURCES. Semiconductor Science and Technology. 1993 ;8:967-978.
Kuech TF, Perkins NR. Metalorganic vapor phase epitaxy of II-VI materials for visible light emitters. Journal of Crystal Growth. 1996 ;166:558-565.
Kuech TF, Nayak S, Huang JW, Li J. Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs. Journal of Crystal Growth. 1996 ;163:171-179.
Kuech TF. Bulk nitride growth and related techniques - International Specialist Meeting on Bulk Nitride Growth and Related Techniques - Foz Do Iguacu, Brazil, 12-16 November 2000 - Preface. Journal of Crystal Growth. 2001 ;231:VII-VII.
Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song XY, Babcock SE, Meyer JR, Vurgaftman I. MOVPE growth of antimonide-containing alloy materials for long wavelength applications. Journal of Crystal Growth. 2008 ;310:4826-4830.
Kuech TF, Babcock SE. Editors' preface to the ICCG-15 conference and the 13th OMVPE workshop proceedings. Journal of Crystal Growth. 2008 ;310:2307-2307.
Kuech TF, Mawst LJ. Nanofabrication of III-V semiconductors employing diblock copolymer lithography. Journal of Physics D-Applied Physics. 2010 ;43.
Kuech TF. The 16th International Conference on Crystal Growth (ICCG16) Beijing, China 8-13 August 2010 preface. Journal of Crystal Growth. 2011 ;318:1-2.
Kuech TF, Babcock SE, Mawst L. Growth far from equilibrium: Examples from III-V semiconductors. Applied Physics Reviews. 2016 ;3.