Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy

TitleSingle junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy
Publication TypeJournal Article
Year of Publication2018
AuthorsKim, H, Kim, K, Guan, YX, Lee, J, Kuech, TF, Mawst, LJ
JournalApplied Physics Letters
Volume112
Date PublishedJun
ISBN Number0003-6951
DOI10.1063/1.5035281