Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy

TitleSelf-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy
Publication TypeJournal Article
Year of Publication2014
AuthorsForghani, K, Guan, YX, Wood, AW, Anand, A, Babcock, SE, Mawst, LJ, Kuech, TF
JournalJournal of Crystal Growth
Volume395
Pagination38-45
Date PublishedJun
DOI10.1016/j.jcrysgro.2014.03.014