Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN

TitleRole of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN
Publication TypeJournal Article
Year of Publication2000
AuthorsGu, SL, Zhang, R, Sun, JX, Zhang, L, Kuech, TF
JournalApplied Physics Letters
Volume76
Pagination3454-3456
Date PublishedJun
DOI10.1063/1.126675