Photocurrent property of GaN on the Si photodetector with a nearly polycrystalline alpha-Al2O3 buffer layer

TitlePhotocurrent property of GaN on the Si photodetector with a nearly polycrystalline alpha-Al2O3 buffer layer
Publication TypeJournal Article
Year of Publication2002
AuthorsJiang, RL, Wang, JZ, Chen, P, Zhao, ZM, Mei, YF, Shen, B, Zhang, R, Wu, XL, Zheng, YD
JournalChinese Physics Letters
Volume19
Pagination1553-1555
Date PublishedOct
Accession Number606VR-0047