Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP

TitleNanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP
Publication TypeJournal Article
Year of Publication2008
AuthorsSong, X, Babcock, SE, Paulson, CA, Kuech, TF, Huang, JYT, Xu, DP, Park, J, Mawst, LJ
JournalJournal of Crystal Growth
Volume310
Pagination2377-2381
Date PublishedApr
DOI10.1016/j.jcrysgro.2007.11.018