InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 mu m-emitting quantum-cascade-laser active regions

TitleInGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 mu m-emitting quantum-cascade-laser active regions
Publication TypeJournal Article
Year of Publication2013
AuthorsMawst, LJ, Kirch, JD, Chang, CC, Kim, T, Garrod, T, Botez, D, Ruder, S, Kuech, TF, Earles, T, Tatavarti, R, Pan, N, Wibowo, A
JournalJournal of Crystal Growth
Volume370
Pagination230-235
Date PublishedMay
DOI10.1016/j.jcrysgro.2012.06.053