Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy

TitleInfluences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy
Publication TypeJournal Article
Year of Publication2002
AuthorsWang, F, Zhang, R, Tan, WS, Xiu, XQ, Lu, DQ, Gu, SL, Shen, B, Shi, Y, Wu, XS, Zheng, YD, Jiang, SS, Kuech, TF
JournalApplied Physics Letters
Volume80
Pagination4765-4767
Date PublishedJun
DOI10.1063/1.1489099