GROWTH-BEHAVIOR OF (C2H5)2GACL AND ASH3 BASED GAAS - LOW REACTOR PRESSURE AND TEMPERATURES

TitleGROWTH-BEHAVIOR OF (C2H5)2GACL AND ASH3 BASED GAAS - LOW REACTOR PRESSURE AND TEMPERATURES
Publication TypeJournal Article
Year of Publication1992
AuthorsKuech, TF, Potemski, R, Cardone, F
JournalJournal of Crystal Growth
Volume124
Pagination318-325
Date PublishedNov
DOI10.1016/0022-0248(92)90478-2