EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE

TitleEPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE
Publication TypeJournal Article
Year of Publication1981
AuthorsKuech, TF, Maenpaa, M, Lau, SS
JournalApplied Physics Letters
Volume39
Pagination245-247
DOI10.1063/1.92695