Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN/sapphire grown by hydride vapor-phase epitaxy

TitleEffect of reactor geometry and growth parameters on the uniformity and material properties of GaN/sapphire grown by hydride vapor-phase epitaxy
Publication TypeJournal Article
Year of Publication1997
AuthorsSafvi, SA, Perkins, NR, Horton, MN, Matyi, R, Kuech, TF
JournalJournal of Crystal Growth
Volume182
Pagination233-240
Date PublishedDec
DOI10.1016/s0022-0248(97)00375-8