Dislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy

TitleDislocation mechanisms in the GaN lateral overgrowth by hydride vapor phase epitaxy
Publication TypeJournal Article
Year of Publication2000
AuthorsKuan, TS, Inoki, CK, Hsu, Y, Harris, DL, Zhang, R, Gu, S, Kuech, TF
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Paginationart. no.-W2.6