Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission

TitleDesign and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission
Publication TypeJournal Article
Year of Publication2009
AuthorsHuang, JYT, Mawst, LJ, Kuech, TF, Song, X, Babcock, SE, Kim, CS, Vurgaftman, I, Meyer, JR, Holmes, AL
JournalJournal of Physics D-Applied Physics
Volume42
Date PublishedJan
DOI10.1088/0022-3727/42/2/025108