Characteristics of strained GaAs1-ySby (0.16 <= y <= 0.69) quantum wells on InP substrates

TitleCharacteristics of strained GaAs1-ySby (0.16 <= y <= 0.69) quantum wells on InP substrates
Publication TypeJournal Article
Year of Publication2007
AuthorsHuang, JYT, Xu, DP, Park, JH, Mawst, LJ, Kuech, TF, Song, X, Babcock, SE, Vurgaftman, I, Meyer, JR
JournalJournal of Physics D-Applied Physics
Volume40
Pagination7656-7661
Date PublishedDec
DOI10.1088/0022-3727/40/24/010