Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-xBix explored by atom probe tomography and HAADF-STEM

TitleAnnealing-induced precipitate formation behavior in MOVPE-grown GaAs1-xBix explored by atom probe tomography and HAADF-STEM
Publication TypeJournal Article
Year of Publication2017
AuthorsWood, AW, Chen, WX, Kim, H, Guan, YX, Forghani, K, Anand, A, Kuech, TF, Mawst, LJ, Babcock, SE
JournalNanotechnology
Volume28
Date PublishedMay
ISBN Number0957-4484
DOI10.1088/1361-6528/aa6cdb